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1. (WO2017034929) NON-UNIFORM SPACING IN TRANSISTOR STACKS

Pub. No.:    WO/2017/034929    International Application No.:    PCT/US2016/047621
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Fri Aug 19 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 29/49
H01L 29/417
H01L 29/66
Applicants: SKYWORKS SOLUTIONS, INC.
Inventors: WHITEFIELD, David Scott
Title: NON-UNIFORM SPACING IN TRANSISTOR STACKS
Abstract:
Field effect transistor stacks include a first field-effect transistor having a source finger, a drain finger, and a gate finger interposed therebetween, the source finger and the drain finger of the first field-effect transistor being separated by a first drain-to- source distance, and a second field-effect transistor in a series connection with the first field-effect transistor, the second field-effect transistor having a source finger, a drain finger, and a gate finger interposed therebetween, the source finger and the drain finger of the second field-effect transistor being separated by a second drain-to-source distance that is different than the first drain-to-source distance.