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1. (WO2017034855) HIGH TEMPERATURE THERMAL ALD SILICON NITRIDE FILMS

Pub. No.:    WO/2017/034855    International Application No.:    PCT/US2016/047150
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Wed Aug 17 01:59:59 CEST 2016
IPC: H01L 21/02
H01L 21/324
H01L 21/285
H01L 21/205
Applicants: APPLIED MATERIALS, INC.
Inventors: LU, Xinliang
LEI, Pingyan
KAO, Chien-Teh
BALSEANU, Mihaela
XIA, Li-Qun
SRIRAM, Mandyam
Title: HIGH TEMPERATURE THERMAL ALD SILICON NITRIDE FILMS
Abstract:
Methods for the deposition of SiN films comprising sequential exposure of a substrate surface to a silicon halide precursor at a temperature greater than or equal to about 600°C and a nitrogen-containing reactant.