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1. (WO2017034834) GATE INDUCED DRAIN LEAKAGE REDUCTION
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/034834 International Application No.: PCT/US2016/046872
Publication Date: 02.03.2017 International Filing Date: 12.08.2016
IPC:
H03F 3/45 (2006.01) ,H03G 1/00 (2006.01) ,H03F 3/189 (2006.01)
[IPC code unknown for H03F 3/45][IPC code unknown for H03G 1][IPC code unknown for H03F 3/189]
Applicants:
QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714, US
Inventors:
ABDELFATTAH, Khaled; US
Agent:
MOORE, JASON L.; 8500 Bluffstone Cove, Suite A201 Austin, Texas 78759, US
Priority Data:
14/939,89412.11.2015US
62/210,81727.08.2015US
Title (EN) GATE INDUCED DRAIN LEAKAGE REDUCTION
(FR) RÉDUCTION DE FUITE DE DRAIN INDUITE PAR LA GRILLE
Abstract:
(EN) Exemplary embodiments of the present disclosure are related to reducing, and possibly preventing, gate inducted drain leakage for a switch. A device may comprise an amplifier and at least one transistor coupled in a feedback path of the amplifier. The device may also comprise a circuit configured to modulate a gate of the at least one transistor with a signal comprising a scaled-down and shifted version of a signal at a drain of the at least one transistor.
(FR) Selon des modes de réalisation cités à titre d'exemple, la présente invention concerne la réduction et éventuellement la prévention des fuites de drain induites par la grille pour un commutateur. Un dispositif selon l'invention comprend éventuellement un amplificateur et au moins un transistor couplé dans un chemin de rétroaction de l'amplificateur. Le dispositif comprend en outre éventuellement un circuit configuré pour moduler une grille dudit/desdits transistor(s) avec un signal comprenant une version décalée et à échelle réduite d'un signal à un drain d'au moins un transistor.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)