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1. (WO2017034741) RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE ELEMENT AND METHOD OF FABRICATING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/034741 International Application No.: PCT/US2016/044258
Publication Date: 02.03.2017 International Filing Date: 27.07.2016
Chapter 2 Demand Filed: 31.05.2017
IPC:
H01L 45/00 (2006.01) ,H01L 27/24 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24
including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
Applicants:
QUALCOMM INCORPORATED [US/US]; 5775 Morehouse Drive San Diego, California 92121-1714, US
Inventors:
LU, Yu; US
LI, Xia; US
KANG, Seung Hyuk; US
Agent:
MOORE, Jason L.; US
JEFFREY G. TOLER; 8500 Bluffstone Cove Suite A201 Austin, TX 78759, US
TOLER, JEFFREY G.; 8500 Bluffstone Cove Suite A201 Austin, TX 78759, US
Priority Data:
14/835,31425.08.2015US
Title (EN) RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE ELEMENT AND METHOD OF FABRICATING SAME
(FR) DISPOSITIF DE MÉMOIRE VIVE RÉSISTIVE À ÉLÉMENT DE MÉMORISATION REPOSANT SUR UNE RÉSISTANCE ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A method of fabrication of a device includes forming a first electrode (158) and a second electrode (162). The method further includes forming a resistive material (160) between the first electrode and the second electrode to form a resistance-based storage element (104) of a resistive random access memory (RRAM) device.
(FR) Un procédé de fabrication d'un dispositif consiste à former une première électrode (158) et une seconde électrode (162). Le procédé consiste en outre à former un matériau résistif (160) entre la première électrode et la seconde électrode de manière à former un élément de mémorisation (104) reposant sur une résistance d'un dispositif de mémoire vive résistive (RRAM).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)