Search International and National Patent Collections

1. (WO2017034709) PROVISION OF ETCH STOP FOR WORDLINES IN A MEMORY DEVICE

Pub. No.:    WO/2017/034709    International Application No.:    PCT/US2016/043143
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Thu Jul 21 01:59:59 CEST 2016
IPC: H01L 27/115
H01L 21/768
Applicants: INTEL CORPORATION
Inventors: HALLER, Gordon A.
LIU, Jun
Title: PROVISION OF ETCH STOP FOR WORDLINES IN A MEMORY DEVICE
Abstract:
Embodiments of the present disclosure are directed towards techniques to provide etch stops to the wordlines that form a staircase structure of a 3D memory array. In one embodiment, the apparatus may comprise a 3D memory array having wordlines disposed in a staircase structure in a die. A wordline may include a silicide layer and a spacer disposed to abut the silicide layer around an end of the wordline. The silicide layer and the spacer may form an etch stop of the wordline for a wordline contact structure to electrically connect the wordline with the memory array in response to deposition of the wordline contact structure on the etch stop. The etch stop may be configured to prevent physical or electrical contact of the wordline contact structure with an adjacent wordline of the staircase structure, in order to avoid undesired short circuits. Other embodiments may be described and/or claimed