Search International and National Patent Collections

1. (WO2017034649) METHOD OF MAKING A MULTILEVEL MEMORY STACK STRUCTURE USING A CAVITY CONTAINING A SACRIFICIAL FILL MATERIAL

Pub. No.:    WO/2017/034649    International Application No.:    PCT/US2016/036837
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Sat Jun 11 01:59:59 CEST 2016
IPC: H01L 27/115
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: LU, Zhenyu
MAO, Daxin
ZHANG, Tong
ALSMEIER, Johann
SHI, Wenguang
CHIEN, Henry
Title: METHOD OF MAKING A MULTILEVEL MEMORY STACK STRUCTURE USING A CAVITY CONTAINING A SACRIFICIAL FILL MATERIAL
Abstract:
A method of forming a three-dimensional memory device, includes forming a lower stack structure of insulating and first sacrificial material layers over a substrate, forming first memory openings through the lower stack structure and filling the first memory openings with a sacrificial fill material, replacing the first sacrificial material layers with first electrically conductive layers, forming an upper stack structure of insulating and second sacrificial material layers over the lower stack structure after replacing the first sacrificial material layers, forming second memory openings through the upper stack structure in areas overlying the first memory openings, replacing the second sacrificial material layers with second electrically conductive layers, removing the sacrificial fill material from the first memory openings underneath the second memory openings to form inter-stack memory openings after replacing the second sacrificial material layers, and forming memory stack structures within the inter-stack memory openings.