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1. (WO2017034646) A THREE DIMENSIONAL MEMORY DEVICE WITH EPITAXIAL SEMICONDUCTOR PEDESTAL FOR PERIPHERAL TRANSISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/034646 International Application No.: PCT/US2016/036656
Publication Date: 02.03.2017 International Filing Date: 09.06.2016
IPC:
H01L 27/115
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
Applicants:
SANDISK TECHNOLOGIES LLC [US/US]; Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024, US
Inventors:
LU, Zhenyu; US
MAO, Daxin; US
MIYATA, Koji; US
ARIYOSHI, Junichi; US
ALSMEIER, Johann; US
MATAMIS, George; US
SHI, Wenguang; US
XU, Jiyin; US
HU, Xiaolong; US
LIN, Andrew; US
YU, Jixin; US
Agent:
RADOMSKY, Leon; US
Priority Data:
14/832,57921.08.2015US
14/995,01713.01.2016US
Title (EN) A THREE DIMENSIONAL MEMORY DEVICE WITH EPITAXIAL SEMICONDUCTOR PEDESTAL FOR PERIPHERAL TRANSISTORS
(FR) DISPOSITIF DE MÉMOIRE TRIDIMENSIONNELLE AVEC SOCLE ÉPITAXIAL DE SEMI-CONDUCTEUR POUR TRANSISTORS PÉRIPHÉRIQUES
Abstract:
(EN) A method of fabricating a memory device is provided. The method includes forming a first alternating stack of insulator layers and spacer material layers over a semiconductor substrate, etching the first alternating stack to expose a single crystalline semiconductor material, forming a first epitaxial semiconductor pedestal on the single crystalline semiconductor material, such that the first epitaxial semiconductor pedestal is in epitaxial alignment with the single crystalline semiconductor material, forming an array of memory stack structures through the first alternating stack, and forming at least one semiconductor device over the first epitaxial semiconductor pedestal.
(FR) L'invention concerne un procédé de fabrication d'un dispositif de mémoire. Le procédé consiste à former une première pile alternée de couches isolantes et de couches de matériau d'espacement sur un substrat semi-conducteur, à graver la première pile alternée pour exposer un matériau semi-conducteur monocristallin, à former un premier socle épitaxial de semi-conducteur sur le matériau semi-conducteur monocristallin, de telle sorte que le premier socle épitaxial de semi-conducteur est en alignement épitaxial avec le matériau semi-conducteur monocristallin, à former une matrice de structures de pile de mémoires à travers la première pile alternée, et à former au moins un dispositif à semi-conducteur sur le premier socle épitaxial de semi-conducteur.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)