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1. (WO2017034563) DUAL PULSE SPIN HALL MEMORY WITH PERPENDICULAR MAGNETIC ELEMENTS

Pub. No.:    WO/2017/034563    International Application No.:    PCT/US2015/047055
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Thu Aug 27 01:59:59 CEST 2015
IPC: G11C 11/16
Applicants: INTEL IP CORPORATION
Inventors: MANIPATRUNI, Sasikanth
DRAY, Cyrille
NIKONOV, Dmitri E.
WANG, Yih
CHAUDHRY, Anurag
YOUNG, Ian A.
Title: DUAL PULSE SPIN HALL MEMORY WITH PERPENDICULAR MAGNETIC ELEMENTS
Abstract:
Described is an apparatus which comprises: a magnetic junction device including a fixed magnetic layer and a free magnetic layer with perpendicular magnetization anisotropy (PMA); a spin orbit coupling (SOC) layer coupled to the free magnetic layer with PMA; a first driver to drive a first in-plane pulse of charge current across the SOC layer; and a write assist driver to drive a pulse of charge current through the magnetic junction.