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1. (WO2017034372) METHOD FOR MANUFACTURING CLICHÉ FOR OFFSET PRINTING, AND CLICHÉ FOR OFFSET PRINTING
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Pub. No.: WO/2017/034372 International Application No.: PCT/KR2016/009529
Publication Date: 02.03.2017 International Filing Date: 26.08.2016
IPC:
H01L 21/027 (2006.01) ,G03F 1/00 (2012.01) ,H01L 21/02 (2006.01) ,H01L 21/033 (2006.01) ,H01L 21/67 (2006.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033
comprising inorganic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
주식회사 엘지화학 LG CHEM, LTD. [KR/KR]; 서울시 영등포구 여의대로 128 128, Yeoui-daero Yeongdeungpo-gu Seoul 07336, KR
Inventors:
손용구 SON, Yong Goo; KR
이승헌 LEE, Seung Heon; KR
Agent:
정순성 CHUNG, Soon-Sung; KR
Priority Data:
10-2015-012015926.08.2015KR
Title (EN) METHOD FOR MANUFACTURING CLICHÉ FOR OFFSET PRINTING, AND CLICHÉ FOR OFFSET PRINTING
(FR) PROCÉDÉ DE FABRICATION DE CLICHÉ DESTINÉ À UN OFFSET, ET CLICHÉ DESTINÉ À UN OFFSET
(KO) 오프셋 인쇄용 클리쉐의 제조방법 및 오프셋 인쇄용 클리쉐
Abstract:
(EN) Provided are a method for manufacturing a cliché for offset printing, and a cliché for offset printing manufactured using the method. The method for manufacturing a cliché for offset printing comprises the steps of: forming a light-shielding mask pattern on a substrate; forming a negative photo-resist layer on the substrate having the light-shielding mask pattern formed thereon; exposing the negative photo-resist layer to light by applying the light to the substrate; and forming a negative photo-resist pattern layer having a protruding embossed portion and a developed groove pattern by making the exposed negative photo-resist layer subjected to developing, wherein the negative photo-resist layer has an average thickness of 3μm or more, the negative photo-resist pattern layer has at least two types of groove patterns having different line-widths, and the at least two types of groove patterns have a line-width difference of 10μm or more therebetween and are connected with each other.
(FR) L'invention concerne un procédé de fabrication d'un cliché pour impression offset, et un cliché pour impression offset fabriqué à l'aide du procédé. Le procédé de fabrication d'un cliché pour impression offset comprend les étapes consistant : à former un motif de masque de protection contre la lumière sur un substrat ; à former une couche de résine photosensible négative sur le substrat sur lequel est formé le motif de masque de protection contre la lumière ; à exposer la couche de résine photosensible négative à de la lumière par application de la lumière sur le substrat ; et à former une couche de motif de résine photosensible négative comportant une partie gaufrée saillante et un motif de rainure développé par soumission de la couche de résine photosensible négative exposée à un développement, la couche de résine photosensible négative ayant une épaisseur moyenne supérieure ou égale à 3 µm, la couche de motif de résine photosensible négative comprenant au moins deux types de motifs de rainure ayant des largeurs de ligne différentes, et lesdits deux types de motifs de rainure ayant une différence de largeur de ligne supérieure ou égale à 10 µm entre elles et étant reliés l'un à l'autre.
(KO) 오프셋 인쇄용 클리쉐의 제조방법, 및 상기 방법으로 제조된 오프셋 인쇄용 클리쉐가 제공된다. 오프셋 인쇄용 클리쉐의 제조방법은 기판 상에 차광마스크패턴을 형성하는 단계, 상기 차광 마스크패턴이 구비된 기판 상에 네가티브 포토레지스트층을 형성하는 단계, 기판 측에 광을 조사하여 노광하는 단계 및 노광된 네가티브 포토레지스트층을 현상하여, 도출된 양각부와 현상된 홈부패턴을 갖는 네가티브 포토레지스트 패턴층을 형성하는 단계를 포함하며, 상기 네가티브 포토레지스트층의 평균 두께는 3㎛ 이상이며, 상기 네가티브 포토레지스트 패턴층은 선폭이 상이한 적어도 2종의 홈부패턴을 가지며, 상기 적어도 2종의 홈부패턴 간의 선폭차이는 10㎛ 이상이고, 상기 선폭의 차이가 10㎛ 이상인 적어도 2종의 홈부패턴은 서로 연결된다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)