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1. (WO2017034268) DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DIODE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/034268 International Application No.: PCT/KR2016/009256
Publication Date: 02.03.2017 International Filing Date: 22.08.2016
IPC:
H05B 33/12 (2006.01) ,H05B 33/22 (2006.01) ,H05B 33/10 (2006.01) ,H01L 33/38 (2010.01) ,H01L 33/02 (2010.01) ,H01L 33/00 (2010.01) ,H01L 33/62 (2010.01) ,H05B 33/14 (2006.01) ,H05B 37/00 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
22
characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
38
with a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
14
characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
37
Circuit arrangements for electric light sources in general
Applicants:
엘지전자 주식회사 LG ELECTRONICS INC. [KR/KR]; 서울시 영등포구 여의대로 128 128, Yeoui-daero Yeongdeungpo-gu Seoul 07336, KR
Inventors:
박창서 PARK, Changseo; KR
전기성 JEON, Kiseong; KR
박진홍 PARK, Jinhong; KR
여환국 YUH, Hwankuk; KR
Agent:
박장원 PARK, Jang-Won; KR
Priority Data:
10-2015-011816321.08.2015KR
10-2016-009957504.08.2016KR
Title (EN) DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DIODE
(FR) DISPOSITIF D'AFFICHAGE UTILISANT UNE DIODE ÉLECTROLUMINESCENTE À SEMI-CONDUCTEURS
(KO) 반도체 발광 소자를 이용한 디스플레이 장치
Abstract:
(EN) The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.
(FR) La présente invention concerne un dispositif d’affichage, et concerne plus particulièrement un dispositif d’affichage utilisant une diode électroluminescente à semi-conducteurs. Un dispositif d'affichage selon la présente invention comprend un substrat ayant une pluralité de plages métalliques ; et une pluralité de diodes électroluminescentes à semi-conducteurs connectées électriquement aux plages métalliques par auto-assemblage. La présente invention est caractérisée en ce que : les diodes électroluminescentes à semi-conducteurs comprennent respectivement une couche semi-conductrice conductrice, une électrode conductrice formée sur une surface de la couche semi-conductrice conductrice, et une couche de passivation enserrant la diode électroluminescente à semi-conducteurs et pourvue d'un trou traversant destiné à découvrir l'électrode conductrice ; une partie d'extrémité des diodes électroluminescentes à semi-conducteurs est divisée en une première partie dans laquelle est découverte l'électrode conductrice, et en une seconde partie, dans laquelle est découverte la couche de passivation ; et la largeur maximale de la plage métallique s'inscrit dans une plage allant d'une proportion équivalant à la largeur à deux fois la largeur de la seconde partie.
(KO) 본 발명은 디스플레이 장치에 관한 것으로 특히, 반도체 발광 소자를 이용한 디스플레이 장치에 관한 것이다. 본 발명에 따른 디스플레이 장치는, 복수의 금속 패드들을 구비하는 기판, 및 자가조립을 통하여 상기 금속 패드들과 전기적으로 연결되는 복수의 반도체 발광소자들을 포함한다. 상기 반도체 발광소자들은 각각, 도전형 반도체층과, 상기 도전형 반도체층의 일면상에 형성되는 도전형 전극, 및 상기 반도체 발광소자를 감싸며, 상기 도전형 전극이 노출되도록 관통홀을 구비하는 패시베이션층을 포함하고, 상기 반도체 발광소자들의 일단부는 상기 도전형 전극이 노출되는 제1부분과, 상기 패시베이션층이 노출되는 제2부분으로 구획되고, 상기 금속 패드의 최대폭은 상기 제2부분의 폭 내지 상기 폭의 2배의 범위에서 설정되는 것을 특징으로 한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)