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1. (WO2017034157) CMP SLURRY COMPOSITION FOR ORGANIC FILM, PREPARATION METHOD THEREFOR, AND METHOD FOR POLISHING ORGANIC FILM BY USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/034157 International Application No.: PCT/KR2016/007937
Publication Date: 02.03.2017 International Filing Date: 21.07.2016
IPC:
C09K 3/14 (2006.01) ,B24B 37/04 (2012.01) ,H01L 21/306 (2006.01) ,H01L 21/321 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
04
designed for working plane surfaces
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321
After-treatment
Applicants:
삼성에스디아이 주식회사 SAMSUNG SDI CO., LTD. [KR/KR]; 경기도 용인시 기흥구 공세로 150-20 150-20, Gongse-ro, Giheung-gu Yongin-si Gyeonggi-do 17084, KR
Inventors:
도균봉 DO, Keun Bong; KR
김동진 KIM, Dong Jin; KR
정영철 JUNG, Young Chul; KR
유용식 YOO, Yong Sik; KR
최정민 CHOI, Jung Min; KR
Agent:
특허법인 아주 AJU INT'L LAW & PATENT GROUP; 서울시 서초구 사임당로 174, 강남미래타워 12-13층 12-13th Floor, Gangnam Mirae Tower, 174 Saimdang- Ro Seocho-Gu Seoul 06627, KR
Priority Data:
10-2015-011824521.08.2015KR
Title (EN) CMP SLURRY COMPOSITION FOR ORGANIC FILM, PREPARATION METHOD THEREFOR, AND METHOD FOR POLISHING ORGANIC FILM BY USING SAME
(FR) COMPOSITION DE SUSPENSION DE PMC POUR FILM ORGANIQUE, SON PROCÉDÉ DE PRÉPARATION, ET PROCÉDÉ DE POLISSAGE D’UN FILM ORGANIQUE L’UTILISANT
(KO) 유기막용 CMP 슬러리 조성물, 그 제조방법, 및 이를 이용한 유기막 연마 방법
Abstract:
(EN) The present invention relates to an organic film CMP slurry comprising an oxidant and a solvent. The organic film CMP slurry of the present invention has a ΔθW, of approximately 5-90°, which is the amount of change in water contact angle, represented by formula (1), and measured after a wafer, coated with an organic film and to be polished, is dipped in the CMP slurry for 10 hours.
(FR) La présente invention concerne une suspension de PMC pour film organique comprenant un oxydant et un solvant. La suspension de PMC pour film organique de la présente invention présente un ΔθW, d’approximativement 5 à 90°, qui est la quantité de changement au niveau de l’angle de contact avec l’eau, représenté par la formule (1), et mesuré après qu’une galette, enduite d’un film organique et à polir, a été immergée dans la suspension de PMC durant 10 heures.
(KO) 본 발명은 산화제 및 용매를 포함하는 유기막용 CMP 슬러리에 관한 것으로, 상기 본 발명의 유기막용 CMP 슬러리는 상기 CMP 슬러리에 피연마 대상인 유기막이 코팅된 웨이퍼를 10시간 동안 침지한 후에 측정한 식 (1)로 표시되는 수 접촉각의 변화량 ΔθW가 약 5° 내지 약 90°이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)