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|1. (WO2017034018) GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE|
|Applicants:||NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA
PUBLIC UNIVERSITY CORPORATION YOKOHAMA CITY UNIVERSITY
|Title:||GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE|
[Problem] To provide a high-quality graphene film in which the number of layers is controlled, and a sapphire substrate that is optimal for obtaining the graphene film. To clarify the characteristics of the sapphire substrate for growing the graphene film that are optimal for achieving a high-quality graphene film and for enabling control of the number of layers. [Solution] The inclination angle between the actual surface of the sapphire substrate for growing the graphene and the crystal lattice surface is set to greater than 0°, whereby a high-quality graphene film in which the number of layers is controlled can be obtained. A composite body is obtained having a single-crystal sapphire substrate for which the off angle is greater than 0°, a metal film epitaxially grown on the sapphire substrate, and a graphene film epitaxially grown on the metal film.