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1. (WO2017034018) GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE

Pub. No.:    WO/2017/034018    International Application No.:    PCT/JP2016/074943
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Sat Aug 27 01:59:59 CEST 2016
IPC: B32B 9/00
Applicants: NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA
並木精密宝石株式会社
PUBLIC UNIVERSITY CORPORATION YOKOHAMA CITY UNIVERSITY
公立大学法人横浜市立大学
Inventors: AOTA Natsuko
青田 奈津子
AIDA Hideo
會田 英雄
TACHIBANA Masaru
橘 勝
MORISAKO Shiyo
森迫 詩陽
Title: GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE
Abstract:
[Problem] To provide a high-quality graphene film in which the number of layers is controlled, and a sapphire substrate that is optimal for obtaining the graphene film. To clarify the characteristics of the sapphire substrate for growing the graphene film that are optimal for achieving a high-quality graphene film and for enabling control of the number of layers. [Solution] The inclination angle between the actual surface of the sapphire substrate for growing the graphene and the crystal lattice surface is set to greater than 0°, whereby a high-quality graphene film in which the number of layers is controlled can be obtained. A composite body is obtained having a single-crystal sapphire substrate for which the off angle is greater than 0°, a metal film epitaxially grown on the sapphire substrate, and a graphene film epitaxially grown on the metal film.