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|1. (WO2017033938) SEMICONDUCTOR DEVICE|
SCIOCS COMPANY LIMITED
SUMITOMO CHEMICAL COMPANY, LIMITED
This semiconductor device is provided with: a semiconductor member that includes a mesa structure in which a first and second semiconductor layer are layered and which has a pn junction; an insulating film that is disposed upon the side surfaces of the mesa and the top surface of the outer sides of the mesa; a first electrode that is connected to the second semiconductor layer on the top surface of the mesa and extends across the mesa side surfaces and the mesa outer side top surfaces upon the insulating film; and a second electrode that is connected to the first semiconductor layer on the bottom surface of the first semiconductor layer. The capacity of the insulating film is such that when a reverse bias is applied across the first and second electrodes, a first voltage applied to the insulating film across a connection corner (first position) between a side surface of the insulating film upon a mesa side surface and a top surface of the insulating film upon a mesa outer side top surface and a connection corner (second position) between the mesa side surface and the mesa outer side top surface is no higher than a second voltage applied to the first semiconductor layer across the pn junction interface (third position) below the contact region between the first electrode and the second semiconductor layer and a site (fourth position) directly below the third position at the height of the second position.