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1. (WO2017033938) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/033938    International Application No.:    PCT/JP2016/074539
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Wed Aug 24 01:59:59 CEST 2016
IPC: H01L 29/861
H01L 21/28
H01L 21/283
H01L 21/329
H01L 29/06
H01L 29/41
H01L 29/868
Applicants: HOSEI UNIVERSITY
学校法人法政大学
SCIOCS COMPANY LIMITED
株式会社サイオクス
SUMITOMO CHEMICAL COMPANY, LIMITED
住友化学株式会社
Inventors: NAKAMURA Tohru
中村 徹
MISHIMA Tomoyoshi
三島 友義
OHTA Hiroshi
太田 博
YAMAMOTO Yasuhiro
山本 康博
HORIKIRI Fumimasa
堀切 文正
Title: SEMICONDUCTOR DEVICE
Abstract:
This semiconductor device is provided with: a semiconductor member that includes a mesa structure in which a first and second semiconductor layer are layered and which has a pn junction; an insulating film that is disposed upon the side surfaces of the mesa and the top surface of the outer sides of the mesa; a first electrode that is connected to the second semiconductor layer on the top surface of the mesa and extends across the mesa side surfaces and the mesa outer side top surfaces upon the insulating film; and a second electrode that is connected to the first semiconductor layer on the bottom surface of the first semiconductor layer. The capacity of the insulating film is such that when a reverse bias is applied across the first and second electrodes, a first voltage applied to the insulating film across a connection corner (first position) between a side surface of the insulating film upon a mesa side surface and a top surface of the insulating film upon a mesa outer side top surface and a connection corner (second position) between the mesa side surface and the mesa outer side top surface is no higher than a second voltage applied to the first semiconductor layer across the pn junction interface (third position) below the contact region between the first electrode and the second semiconductor layer and a site (fourth position) directly below the third position at the height of the second position.