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1. WO2017033915 - ETCHING LIQUID COMPOSITION AND ETCHING METHOD

Publication Number WO/2017/033915
Publication Date 02.03.2017
International Application No. PCT/JP2016/074475
International Filing Date 23.08.2016
IPC
H01L 21/308 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/3205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 21/3213 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
CPC
C09K 13/06
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
06with organic material
C09K 13/08
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
08containing a fluorine compound
C23F 1/14
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
14Aqueous compositions
C23F 1/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
14Aqueous compositions
16Acidic compositions
18for etching copper or alloys thereof
C23F 1/20
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
14Aqueous compositions
16Acidic compositions
20for etching aluminium or alloys thereof
C23F 1/26
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
14Aqueous compositions
16Acidic compositions
26for etching refractory metals
Applicants
  • 株式会社ADEKA ADEKA CORPORATION [JP]/[JP]
Inventors
  • 石崎 隼郎 ISHIZAKI, Junro
  • 大宮 大輔 OMIYA, Daisuke
Agents
  • 曾我 道治 SOGA, Michiharu
  • 梶並 順 KAJINAMI, Jun
  • 大宅 一宏 OHYA, Kazuhiro
Priority Data
2015-16696426.08.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ETCHING LIQUID COMPOSITION AND ETCHING METHOD
(FR) COMPOSITION DE LIQUIDE DE GRAVURE ET PROCÉDÉ DE GRAVURE
(JA) エッチング液組成物及びエッチング方法
Abstract
(EN)
The purpose of the present invention is to provide: an etching liquid composition which allows for simultaneous etching of a titanium-based layer and a copper-based layer of a material, to be subjected to etching, having a laminate including the titanium-based layer and the copper-based layer, and which is capable of creating a fine line of a desired cross-sectional shape even when used continuously; and an etching method comprising using the etching liquid. To accomplish this purpose, the present invention provides: an etching liquid composition containing (A) 0.1-15.0 mass% of hydrogen peroxide, (B) 0.01-1.00 mass% of a fluoride ion source, (C) an organic sulfonic acid compound represented by general formula (I) or a salt thereof in an amount of 0.1-20.0 mass% in organic sulfonic acid equivalent, (D) 0.01-5.00 mass% of at least one type of compound selected from among azole compounds and compounds having a structure that has a 6-member heterocycle including at least one nitrogen atom and three double bonds, and (E) water; and an etching method comprising using the etching liquid composition. (In the formula, R represents an alkyl group having 1-4 carbon atoms, a hydroxyalkyl group having 1-4 carbon atoms, an aryl group having 6-10 carbon atoms, or a hydroxyaryl group having 6-10 carbon atoms.)
(FR)
L'objet de la présente invention est de fournir : une composition de liquide de gravure qui permet une gravure simultanée d'une couche à base de titane et d'une couche à base de cuivre d'un matériau, devant être soumis à une gravure, ayant un stratifié comprenant la couche à base de titane et la couche à base de cuivre, et qui est capable de créer une ligne fine d'une forme de section transversale souhaitée, même lorsqu'elle est utilisée en continu ; et un procédé de gravure comprenant l'utilisation du liquide de gravure. Pour atteindre cet objet, la présente invention concerne : une composition de liquide de gravure contenant (A) de 0,1 à 15,0 % en masse de peroxyde d'hydrogène, (B) de 0,01 à 1,00 % en masse d'une source d'ions fluorure, (C) un composé d'acide sulfonique organique représenté par la formule générale (I) ou un sel de celui-ci à hauteur de 0,1 à 20,0 % en masse en équivalent d'acide sulfonique organique, (D) de 0,01 à 5,00 % en masse d'au moins un type de composé choisi parmi des composés d'azole et des composés ayant une structure qui a un hétérocycle à six membres comprenant au moins un atome d'azote et trois doubles liaisons, et (E) de l'eau ; et un procédé de gravure comprenant l'utilisation de la composition de liquide de gravure. (Dans la formule, R représente un groupe alkyle ayant de 1 à 4 atomes de carbone, un groupe hydroxyalkyle ayant de 1 à 4 atomes de carbone, un groupe aryle ayant de 6 à 10 atomes de carbone, ou un groupe hydroxyaryle ayant de 6 à 10 atomes de carbone.)
(JA)
本発明は、チタン系層及び銅系層を含む積層体を有する被エッチング材のチタン系層及び銅係層を一括でエッチングすることが可能で、連続的に用いても、所望の断面形状の細線を得ることができるエッチング液組成物及び当該エッチング液を用いることを含むエッチング方法を提供することを目的とする。 上記目的を達成するため、本発明は、(A)過酸化水素0.1~15質量%;(B)フッ化物イオン供給源0.01~1質量%;(C)下記一般式(I)で表される有機スルホン酸化合物またはその塩を、有機スルホン酸換算で0.1~20質量%;(D)アゾール系化合物及び窒素原子を1つ以上含み3つの2重結合を有する複素6員環を構造中に有する化合物から選ばれる少なくとも1種の化合物0.01~5質量%及び(E)水を含むエッチング液組成物及び当該エッチング液組成物を使用することを含むエッチング方法を提供する。(式中、Rは炭素原子数1~4のアルキル基、炭素原子数1~4のヒドロキシアルキル基、炭素原子数6~10のアリール基、炭素原子数6~10のヒドロキシアリール基を表す。)
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