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1. (WO2017033768) PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE

Pub. No.:    WO/2017/033768    International Application No.:    PCT/JP2016/073731
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Sat Aug 13 01:59:59 CEST 2016
IPC: H01L 31/0216
H01L 21/318
H01L 31/0747
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: OKAMOTO, Chikao
岡本 親扶
ISAKA, Takayuki
伊坂 隆行
ISHII, Masahito
石井 真人
KOBAYASHI, Masamichi
小林 正道
Title: PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE
Abstract:
This photoelectric conversion element (1) is provided with: a semiconductor substrate (11) having a first surface (11a) and a second surface (11b) that is on the reverse side of the first surface (11a); and a composite dielectric layer (16) that is formed on the first surface (11a) of the semiconductor substrate (11). The composite dielectric layer (16) comprises three or more dielectric layers (16a, 16b, 16c) that are respectively formed from silicon nitride. With respect to each pair of dielectric layers adjacent to each other in the composite dielectric layer (16), the semiconductor substrate (11)-side dielectric layer has a smaller molar fraction of nitrogen in the silicon nitride than the other dielectric layer that is positioned on the reverse side of the semiconductor substrate (11) side. Consequently, this photoelectric conversion element (1) has a further decreased reflectance with respect to incident light, while having improved passivation characteristics.