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1. (WO2017033694) HIGH PURITY COPPER SPUTTERING TARGET MATERIAL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/033694 International Application No.: PCT/JP2016/072819
Publication Date: 02.03.2017 International Filing Date: 03.08.2016
IPC:
C23C 14/34 (2006.01) ,C22C 9/01 (2006.01) ,C22C 9/10 (2006.01) ,C22F 1/08 (2006.01) ,C22B 15/14 (2006.01) ,C22C 9/06 (2006.01) ,C22C 9/08 (2006.01) ,C22F 1/00 (2006.01) ,C25C 1/12 (2006.01) ,C25C 7/02 (2006.01)
[IPC code unknown for C23C 14/34][IPC code unknown for C22C 9/01][IPC code unknown for C22C 9/10][IPC code unknown for C22F 1/08][IPC code unknown for C22B 15/14][IPC code unknown for C22C 9/06][IPC code unknown for C22C 9/08][IPC code unknown for C22F 1][IPC code unknown for C25C 1/12][IPC code unknown for C25C 7/02]
Applicants:
三菱マテリアル株式会社 MITSUBISHI MATERIALS CORPORATION [JP/JP]; 東京都千代田区大手町一丁目3番2号 3-2, Otemachi 1-chome, Chiyoda-ku, Tokyo 1008117, JP
Inventors:
森 曉 MORI Satoru; JP
谷 雨 TANI U; JP
佐藤 雄次 SATO Yuuji; JP
菊池 文武 KIKUCHI Fumitake; JP
荒井 公 ARAI Isao; JP
Agent:
志賀 正武 SHIGA Masatake; JP
寺本 光生 TERAMOTO Mitsuo; JP
松沼 泰史 MATSUNUMA Yasushi; JP
細川 文広 HOSOKAWA Fumihiro; JP
大浪 一徳 ONAMI Kazunori; JP
Priority Data:
2015-16463124.08.2015JP
2015-20010808.10.2015JP
2015-20010908.10.2015JP
2015-20011008.10.2015JP
2016-03117422.02.2016JP
2016-03133422.02.2016JP
Title (EN) HIGH PURITY COPPER SPUTTERING TARGET MATERIAL
(FR) MATÉRIAU CIBLE DE PULVÉRISATION DE CUIVRE DE PURETÉ ÉLEVÉE
(JA) 高純度銅スパッタリングターゲット材
Abstract:
(EN) Provided is a high purity copper sputtering target material characterized in that Cu purity excluding O, H, N and C is at least 99.99998 mass%, Al content is 0.005 mass ppm or less, Si content is 0.05 mass ppm or less, Fe content is 0.02 mass ppm or less, S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, O content is 1 mass ppm or less, H content is 1 mass ppm or less, N content is 1 mass ppm or less, and C content is 1 mass ppm or less.
(FR) La présente invention se rapporte à un matériau cible de pulvérisation de cuivre de pureté élevée caractérisé en ce que la pureté de Cu, en excluant O, H, N et C, est d'au moins 99,99998 % en masse, la teneur en Al est de 0,005 ppm en masse ou moins, la teneur en Si est de 0,05 ppm en masse ou moins, la teneur en Fe est de 0,02 ppm en masse ou moins, la teneur en S est de 0,03 ppm en masse ou moins, la teneur en Cl est de 0,1 ppm en masse ou moins, la teneur en O est de 1 ppm en masse ou moins, la teneur en H est de 1 ppm en masse ou moins, la teneur en N est 1 ppm en masse ou moins et la teneur en C est 1 ppm en masse ou moins.
(JA) O,H,N,Cを除いたCuの純度が99.99998mass%以上とされ、Alの含有量が0.005massppm以下、Siの含有量が0.05massppm以下、Feの含有量が0.02massppm以下,Sの含有量が0.03massppm以下、Clの含有量が0.1massppm以下、Oの含有量が1massppm以下、Hの含有量が1massppm以下、Nの含有量が1massppm以下、Cの含有量が1massppm以下とされていることを特徴とする高純度銅スパッタリングターゲット材を提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)