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1. (WO2017033673) DRIVE CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT, POWER CONVERSION UNIT, AND POWER CONVERSION DEVICE

Pub. No.:    WO/2017/033673    International Application No.:    PCT/JP2016/072465
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Tue Aug 02 01:59:59 CEST 2016
IPC: H02M 1/08
H02M 1/00
H03K 17/08
H03K 17/12
H03K 17/56
Applicants: HITACHI, LTD.
株式会社日立製作所
Inventors: MIMA Akira
三間 彬
Title: DRIVE CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT, POWER CONVERSION UNIT, AND POWER CONVERSION DEVICE
Abstract:
This drive circuit for a power semiconductor element is a drive circuit that is provided in correspondence with each of multiple power semiconductor elements connected in parallel, and that drives the power semiconductor element. This drive circuit for a power semiconductor element is equipped with a storage unit that stores characteristic information of the power semiconductor element, and a gate drive control unit that controls the drive conditions for a gate of the power semiconductor element on the basis of the characteristic information stored in the storage unit.