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|1. (WO2017033642) SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND LOAD DRIVING DEVICE|
|Applicants:||HITACHI AUTOMOTIVE SYSTEMS, LTD.
|Title:||SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND LOAD DRIVING DEVICE|
There is a drawback that current density cannot be uniform across transistors disposed and spread two-dimensionally. In the present invention, on a transistor layer on which multiple transistors 1 each having a drain, a source, and a gate are disposed in parallel, a metal wiring layer 10 serving as an input-side wiring layer to which the drain of each transistor 1 is connected and a metal wiring layer 11 serving as an output-side wiring layer to which the source of each transistor is connected are juxtaposed to each other. Further, a plurality of through holes are provided which connect the metal wiring layer 10 serving as the input-side wiring layer to the drain of each transistor, and connect the metal wiring layer 11 serving as the output-side wiring layer to the source of each transistor. The values of the resistances of the through holes 2, 3 are changed along the direction in which the input-side wiring layer and the output-side wiring layer are arranged, so that the current density of the transistors disposed and spread two-dimensionally can be made uniform.