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1. (WO2017033642) SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND LOAD DRIVING DEVICE

Pub. No.:    WO/2017/033642    International Application No.:    PCT/JP2016/071658
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Tue Jul 26 01:59:59 CEST 2016
IPC: H01L 21/336
H01L 21/28
H01L 21/3205
H01L 21/768
H01L 23/522
H01L 29/78
Applicants: HITACHI AUTOMOTIVE SYSTEMS, LTD.
日立オートモティブシステムズ株式会社
Inventors: IKEGAYA Katsumi
池ヶ谷 克己
OSHIMA Takayuki
大島 隆文
Title: SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND LOAD DRIVING DEVICE
Abstract:
There is a drawback that current density cannot be uniform across transistors disposed and spread two-dimensionally. In the present invention, on a transistor layer on which multiple transistors 1 each having a drain, a source, and a gate are disposed in parallel, a metal wiring layer 10 serving as an input-side wiring layer to which the drain of each transistor 1 is connected and a metal wiring layer 11 serving as an output-side wiring layer to which the source of each transistor is connected are juxtaposed to each other. Further, a plurality of through holes are provided which connect the metal wiring layer 10 serving as the input-side wiring layer to the drain of each transistor, and connect the metal wiring layer 11 serving as the output-side wiring layer to the source of each transistor. The values of the resistances of the through holes 2, 3 are changed along the direction in which the input-side wiring layer and the output-side wiring layer are arranged, so that the current density of the transistors disposed and spread two-dimensionally can be made uniform.