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|1. (WO2017033636) SEMICONDUCTOR DEVICE|
A semiconductor device wherein a semiconductor substrate (50) has a first major surface (50a) and a second major surface (50b) on a rear surface thereof, and is provided with both an IGBT cell (10) having a collector region (14) and a diode cell (20) having a cathode region (22), wherein the semiconductor substrate (50) is provided with a first defect layer (15a) and a second defect layer (15b) in a drift region (17). When, in the drift region, a boundary region is defined as a region which is enclosed by: an interface (Pb) of the IGBT cell and the diode cell which is perpendicular to a first major surface; and a plane (Pc) which passes a boundary line extending, at the boundary of the collector region and the cathode region, along an interface of the collector region and the drift region, and which intersects the first major surface at an angle of 45 degrees, the diode cell is formed such that an area S of a surface on the first major surface side of the drift region which is occupied by the boundary region and an area SDI occupied by the diode cell satisfy a relationship SDI > S.