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1. WO2017033495 - SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE

Publication Number WO/2017/033495
Publication Date 02.03.2017
International Application No. PCT/JP2016/062656
International Filing Date 21.04.2016
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B08B 1/04
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
1Cleaning by methods involving the use of tools, brushes, or analogous members
04using rotary operative members
H01L 21/02043
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02043Cleaning before device manufacture, i.e. Begin-Of-Line process
H01L 21/02087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02082product to be cleaned
02087Cleaning of wafer edges
H01L 21/02096
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02096only mechanical cleaning
H01L 21/67046
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67046using mainly scrubbing means, e.g. brushes
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 中村 一樹 NAKAMURA, Kazuki
Agents
  • 稲岡 耕作 INAOKA, Kosaku
Priority Data
2015-16609925.08.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
Abstract
(EN)
A brush is moved from a center position to an outer periphery position while the brush is contacted with an upper surface of a substrate being rotated at a first rotation speed. In this way, a flat region of the substrate is scrub-cleansed. Thereafter, the brush is contacted with a bevel region of the substrate being rotated at a second rotation speed lower than the first rotation speed. In this way, the bevel region of the substrate is scrub-cleansed. Thereafter, while the substrate is rotated at a third rotation speed higher than the second rotation speed, the brush is disposed at an overlapping region cleansing position. In this way, an overlapping region of the flat region and the bevel region are scrub-cleansed.
(FR)
Selon l'invention, une brosse est déplacée d'une position centrale à une position périphérique extérieure pendant que la brosse est mise en contact avec une surface supérieure d'un substrat qui est mis en rotation à une première vitesse de rotation. De cette manière, une région plate du substrat est nettoyée par brossage. Ensuite, la brosse est mise en contact avec une région de biseau du substrat qui est mis en rotation à une deuxième vitesse de rotation inférieure à la première vitesse de rotation. De cette manière, la région de biseau du substrat est nettoyée par brossage. Puis, pendant que le substrat est mis en rotation à une troisième vitesse de rotation supérieure à la deuxième vitesse de rotation, la brosse est disposée au niveau d'une position de nettoyage de région de chevauchement. De cette manière, une région de chevauchement de la région plate et de la région de biseau est nettoyée par brossage.
(JA)
第1回転速度で回転している基板の上面にブラシを接触させながら、中央位置から外周位置に移動させる。これにより、基板の平坦領域がスクラブ洗浄される。その後、第1回転速度よりも小さい第2回転速度で回転している基板のベベル領域にブラシを接触させる。これにより、基板のベベル領域がスクラブ洗浄される。その後、第2回転速度よりも大きい第3回転速度で基板を回転させながら、ブラシを重複領域洗浄位置に配置する。これにより、平坦領域およびベベル領域の重複領域がスクラブ洗浄される。
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