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1. (WO2017033315) SEMICONDUCTOR ELEMENT

Pub. No.:    WO/2017/033315    International Application No.:    PCT/JP2015/074062
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Thu Aug 27 01:59:59 CEST 2015
IPC: H01L 29/739
H01L 27/04
H01L 29/78
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: KONISHI, Kazuya
小西 和也
FUKADA, Yusuke
深田 祐介
KAMIBABA, Ryu
上馬場 龍
UMEYAMA, Mariko
梅山 真理子
NARAZAKI, Atsushi
楢崎 敦司
TARUTANI, Masayoshi
多留谷 政良
Title: SEMICONDUCTOR ELEMENT
Abstract:
This semiconductor element is provided with: a semiconductor substrate; an emitter electrode formed on the semiconductor substrate; a gate electrode formed on the semiconductor substrate; a first conductivity-type source layer formed on the semiconductor substrate; a second conductivity-type base layer formed on the semiconductor substrate; a collector electrode formed under the semiconductor substrate; a plurality of active trench gates, which are formed on the upper surface side of the semiconductor substrate, and which are connected to the gate electrode; and a plurality of dummy trench gates, which are formed on the upper surface side of the semiconductor substrate, and which are not connected to the gate electrode. First structures, each of which has three or more active trench gates that are aligned with each other, and second structures, each of which has three or more dummy trench gates that are aligned with each other, are alternately provided.