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1. (WO2017033233) SEMICONDUCTOR SUBSTRATE, METHOD FOR GRINDING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/033233    International Application No.:    PCT/JP2015/073592
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Sat Aug 22 01:59:59 CEST 2015
IPC: H01L 29/861
H01L 21/304
H01L 21/329
H01L 21/336
H01L 29/12
H01L 29/739
H01L 29/78
H01L 29/868
Applicants: HITACHI, LTD.
株式会社日立製作所
Inventors: YOSHIMOTO, Hiroyuki
吉元 広行
Title: SEMICONDUCTOR SUBSTRATE, METHOD FOR GRINDING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A semiconductor substrate (SB1) has: a base body (11) formed of silicon carbide; a p-type semiconductor layer (12), which is formed on the base body (11), and is formed of silicon carbide; an n-type semiconductor layer (13), which is formed on the p-type semiconductor layer (12), and is formed of silicon carbide; and a p-type semiconductor layer (14), which is formed on the n-type semiconductor layer (13), and is formed of silicon carbide.