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1. (WO2017033216) WIDE-GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING WIDE-GAP SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/033216    International Application No.:    PCT/JP2015/004312
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Fri Aug 28 01:59:59 CEST 2015
IPC: H01L 29/872
H01L 29/06
Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
新電元工業株式会社
Inventors: MAEYAMA, Yusuke
前山 雄介
NAKAMURA, Shunichi
中村 俊一
OGASAWARA, Atsushi
小笠原 淳
OSAWA, Ryohei
大澤 良平
SHIBUKAWA, Akihiko
渋川 昭彦
Title: WIDE-GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING WIDE-GAP SEMICONDUCTOR DEVICE
Abstract:
This wide-gap semiconductor device is provided with: a first conductivity-type semiconductor layer (32); second conductivity-type regions (41, 42) that are provided on the first conductivity-type semiconductor layer (32); a first electrode (10), a part of which is positioned on the second conductivity-type regions (41, 42), and the rest of which is positioned on the first conductivity-type semiconductor layer (32); insulating layers (51, 52, 53), which are provided adjacent to the first electrode (10), said insulating layers being on the first conductivity-type semiconductor layer (32), and extending to an end portion of the wide-gap semiconductor device; and a second electrode (20), which is provided between the first electrode (10) and the end portion of the wide-gap semiconductor device, and which forms a Schottky junction with the first conductivity-type semiconductor layer (32).