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1. (WO2017033082) SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE PROVIDED WITH SAID SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/033082    International Application No.:    PCT/IB2016/054779
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Wed Aug 10 01:59:59 CEST 2016
IPC: H01L 29/786
G09F 9/30
H01L 27/146
H01L 31/12
H01L 51/50
H04N 5/33
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
株式会社半導体エネルギー研究所
Inventors: HAYAKAWA, Masahiko
早川昌彦
KUWABARA, Hideaki
桑原秀明
Title: SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE PROVIDED WITH SAID SEMICONDUCTOR DEVICE
Abstract:
A light emitting device that has an oxide semiconductor film and emits near-infrared light is provided. The device is a semiconductor device provided with a transistor. The transistor is provided with: a first gate electrode; a first insulating film upon the first gate electrode; an oxide semiconductor film having a region which overlaps the first gate electrode with the first insulating film therebetween; a second insulating film upon the oxide semiconductor film; a second gate electrode having a region which overlaps the oxide semiconductor film with the second insulating film therebetween; and a third insulating film upon the oxide semiconductor film and the second gate electrode. The oxide semiconductor film has a channel region that is in contact with the second insulating film, the channel region has a region that emits light, and the emitted light includes near-infrared light.