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|1. (WO2017033082) SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE PROVIDED WITH SAID SEMICONDUCTOR DEVICE|
|Applicants:||SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
|Title:||SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE PROVIDED WITH SAID SEMICONDUCTOR DEVICE|
A light emitting device that has an oxide semiconductor film and emits near-infrared light is provided. The device is a semiconductor device provided with a transistor. The transistor is provided with: a first gate electrode; a first insulating film upon the first gate electrode; an oxide semiconductor film having a region which overlaps the first gate electrode with the first insulating film therebetween; a second insulating film upon the oxide semiconductor film; a second gate electrode having a region which overlaps the oxide semiconductor film with the second insulating film therebetween; and a third insulating film upon the oxide semiconductor film and the second gate electrode. The oxide semiconductor film has a channel region that is in contact with the second insulating film, the channel region has a region that emits light, and the emitted light includes near-infrared light.