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1. (WO2017031937) METHOD FOR PREPARING OXIDE SEMICONDUCTOR THIN FILM AND METHOD FOR PREPARING THIN FILM TRANSISTOR

Pub. No.:    WO/2017/031937    International Application No.:    PCT/CN2016/071546
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Fri Jan 22 00:59:59 CET 2016
IPC: H01L 21/02
H01L 21/34
H01L 29/786
Applicants: BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventors: KONG, Xiangyong
孔祥永
Title: METHOD FOR PREPARING OXIDE SEMICONDUCTOR THIN FILM AND METHOD FOR PREPARING THIN FILM TRANSISTOR
Abstract:
Provided are a method for preparing an oxide semiconductor thin film and a method for preparing a thin film transistor, which belong to the display technology field and can solve the problems that a crystallization temperature of an oxide semiconductor thin film in existing oxide thin film transistors is very high and the preparation technology difficulty is high. The method for preparing an oxide semiconductor thin film comprises the following steps: forming an inducing layer thin film (2) on a substrate (1); forming an oxide semiconductor thin film (3) on the substrate (1) on which the inducing layer thin film (2) is formed; and carrying out an annealing treatment, so as to crystallize the oxide semiconductor thin film (3).