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1. (WO2017031924) THIN FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

Pub. No.:    WO/2017/031924    International Application No.:    PCT/CN2016/070257
Publication Date: Fri Mar 03 00:59:59 CET 2017 International Filing Date: Thu Jan 07 00:59:59 CET 2016
IPC: H01L 27/12
G02F 1/1343
H01L 21/768
H01L 21/77
Applicants: BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
合肥鑫晟光电科技有限公司
Inventors: FENG, Wei
冯伟
Title: THIN FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE
Abstract:
A thin film transistor array substrate, a manufacturing method therefor, and a display device. The thin film transistor array substrate comprises a substrate (1), a gate (2) provided on the substrate (1), a gate insulating layer and an active layer (4) which are provided on the gate (2) in sequence, and a pixel electrode, a common electrode and a transparent electrode layer (3) which are provided on the substrate (1), the transparent electrode layer (3) and the pixel electrode/common electrode being at the same layer and being made of a same material. The transparent electrode layer (3) is located below the gate insulating layer. The orthographic projection of the active layer (4) on the substrate (1) is located within the area of the orthographic projection of the transparent electrode layer (3). The thin film transistor array substrate reduces electrode layer residues in the area where thin film transistors are located, thus making the surface of the active layer flat and avoiding the image unevenness caused by the residues. The thin film transistor array substrate is easy to implement and has small impact on the gate resistance, and can improve the product quality.