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|1. (WO2017031821) CERAMIC RING CAPABLE OF CHANGING SHAPE AND APPEARANCE OF SURFACE THIN FILM OF WAFER|
|Applicants:||SHENYANG PIOTECH CO., LTD.
|Title:||CERAMIC RING CAPABLE OF CHANGING SHAPE AND APPEARANCE OF SURFACE THIN FILM OF WAFER|
A ceramic ring (1) capable of changing the shape and appearance of a surface thin film of a wafer (3) in a semiconductor plasma processing device. The ceramic ring (1) is located on an objective table (5), and is used for bearing a wafer (3) to be machined. An edge, supporting a step (4) of the wafer (3), of the ceramic ring (1) is at a right angle, and the height d1 of the step can be set differently. In a high-temperature process, when a plasma air flow passes through the edge of the step (4), the height d1 of the step exerts an impact on the flowing of the air flow, thereby impacting the uniformity of a film layer. The air flow distribution at the step (4) of the ceramic ring and the edge of the wafer (3) can be effectively adjusted, thereby impacting the uniformity of plasma distribution, and improving the growth condition of an edge thin film of the wafer (3). The ceramic ring is reasonable in structure, is practical and is easy to implement. The ceramic ring can be widely used in the technical field of semiconductor film deposition.