Processing

Please wait...

Settings

Settings

Goto Application

1. WO2017029720 - MAGNETIC SENSOR AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2017/029720
Publication Date 23.02.2017
International Application No. PCT/JP2015/073210
International Filing Date 19.08.2015
IPC
H01L 29/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
H01L 21/8246 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8246Read-only memory structures (ROM)
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
CPC
H01L 27/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 29/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
82controllable by variation of the magnetic field applied to the device
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
Applicants
  • 株式会社日立製作所 HITACHI, LTD. [JP]/[JP]
Inventors
  • 三浦 勝哉 MIURA Katsuya
  • 小川 晋 OGAWA Susumu
  • 高橋 宏昌 TAKAHASHI Hiromasa
Agents
  • ポレール特許業務法人 POLAIRE I.P.C.
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MAGNETIC SENSOR AND METHOD FOR MANUFACTURING SAME
(FR) CAPTEUR MAGNÉTIQUE ET SON PROCÉDÉ DE FABRICATION
(JA) 磁気センサ及びその製造方法
Abstract
(EN)
For the purpose of providing a technique that enables easy control of the magnetic anisotropy magnetic field of a device that utilizes a TMR effect, a magnetic sensor according to the present invention comprises: a magnetic sensor unit 204 which comprises a first ferromagnetic layer 201 having a fixed magnetization direction, a second ferromagnetic layer 203 having a variable magnetization direction, and a barrier layer 202 arranged between the ferromagnetic layers, and wherein the anisotropy field is more than 0 mT but 10 mT or less; an electrode 210 which fills a contact hole and is connected to the second ferromagnetic layer 203; a hydrogen stopper layer 208 which is formed on a side wall of the electrode 210; and a side wall film 212 which is formed on a side wall of the magnetic sensor unit 204 and is formed of a metal oxide or a metal nitride.
(FR)
Dans le but de fournir une technique qui permet une commande aisée du champ magnétique d'anisotropie magnétique d'un dispositif qui utilise un effet TMR, un capteur magnétique selon la présente invention comprend : une unité de capteur magnétique 204 qui comprend une première couche ferromagnétique 201 ayant une direction de magnétisation fixe, une seconde couche ferromagnétique 203 ayant une direction de magnétisation variable, et une couche de barrière 202 disposée entre les couches ferromagnétiques, et le champ d'anisotropie étant supérieur à 0 mT mais de 10 mT ou moins ; une électrode 210 qui remplit un trou de contact et est connectée à la seconde couche ferromagnétique 203 ; une couche d'arrêt d'hydrogène 208 qui est formée sur une paroi latérale de l'électrode 210 ; et un film de paroi latérale 212 qui est formé sur une paroi latérale de l'unité de capteur magnétique 204 et est formé d'un oxyde métallique ou d'un nitrure métallique.
(JA)
TMR効果を利用するデバイスの磁気異方性磁界を容易に制御可能な技術を提供するために、磁化方向固定の第1強磁性層201と磁化方向可変の第2強磁性層203とその間に配置された障壁層202とを有し異方性磁界が0を超え10mT以下の磁気センサ部204と、コンタクトホール内に充填され第2強磁性層203に接続された電極210と、電極210の側壁に形成された水素ストッパ層208と、磁気センサ部204の側壁に形成され金属酸化物又は金属窒化物からなる側壁膜212とを有する磁気センサとする。
Latest bibliographic data on file with the International Bureau