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1. WO2017029383 - EUV LITHOGRAPHY SYSTEM AND METHOD

Publication Number WO/2017/029383
Publication Date 23.02.2017
International Application No. PCT/EP2016/069658
International Filing Date 18.08.2016
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G02B 17/06 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
17Systems with reflecting surfaces, with or without refracting elements
02Catoptric systems, e.g. image erecting and reversing system
06using mirrors only
CPC
G02B 17/0647
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
17Systems with reflecting surfaces, with or without refracting elements
02Catoptric systems, e.g. image erecting and reversing system
06using mirrors only ; , i.e. having only one curved mirror
0647using more than three curved mirrors
G03F 7/70033
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70008Production of exposure light, i.e. light sources
70033by plasma EUV sources
G03F 7/70233
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70233Optical aspects of catoptric systems
G03F 7/7025
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
7025Size or form of projection system aperture
G03F 7/70308
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70308Optical correction elements, filters and phase plates for manipulating, e.g. intensity, wavelength, polarization, phase, image shift
Applicants
  • CARL ZEISS SMT GMBH [DE]/[DE]
Inventors
  • WOLF, Alexander
  • HARTJES, Joachim
  • GRUNER, Toralf
  • GOLDE, Daniel
  • MANN, Hans-Jürgen
Agents
  • HORN KLEIMANN WAITZHOFER PATENTANWÄLTE PARTG MBB
Priority Data
10 2015 215 948.520.08.2015DE
10 2015 220 144.916.10.2015DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) EUV-LITHOGRAPHIEANLAGE UND VERFAHREN
(EN) EUV LITHOGRAPHY SYSTEM AND METHOD
(FR) INSTALLATION DE LITHOGRAPHIE EXTRÊME ULTRAVIOLET ET PROCÉDÉ Y RELATIF
Abstract
(DE)
Es wird offenbart eine EUV-Lithographieanlage (100) mit einem Projektionssystem (104), in welchem ein optisches System (138) angeordnet ist, wobei das optische System (13) aufweist: eine Obskurationsblende (200) zum Blockieren zumindest eines Bereichs (204) eines Strahlengangs (206), und eine Manipulationseinrichtung (202) zum Verschieben und/oder Verkippen der Obskurationsblende (200).
(EN)
The invention relates to an EUV lithography system (100) having a projection system (104), in which an optical system (138) is arranged, wherein the optical system (13) comprises: an obscuration diaphragm (200) for blocking at least one region (204) of a beam path (206), and a manipulation device (202) for moving and/or tilting the obscuration diaphragm (200).
(FR)
L’invention concerne une installation de lithographie extrême ultraviolet (100) comprenant un système de projection (104) qui abrite un système optique (138), le système optique (138) présentant : un diaphragme d’obturation (200) destiné au blocage d’au moins une zone (204) d’un chemin optique (206), et un dispositif de manipulation (202) destiné au déplacement et/ou basculement du diaphragme d’obturation (200).
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