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1. WO2017026430 - HIGH-FREQUENCY MODULE AND METHOD FOR PRODUCING SAME

Publication Number WO/2017/026430
Publication Date 16.02.2017
International Application No. PCT/JP2016/073235
International Filing Date 08.08.2016
IPC
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
H05K 9/00 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
9Screening of apparatus or components against electric or magnetic fields
CPC
H01L 21/4853
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
H01L 21/4857
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
4857Multilayer substrates
H01L 21/565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
565Moulds
H01L 21/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 23/13
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
13characterised by the shape
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 大坪 喜人 OTSUBO, Yoshihito
  • 増田 義久 MASUDA, Yoshihisa
  • 中越 英雄 NAKAGOSHI, Hideo
  • 森本 裕太 MORIMOTO, Yuta
  • 酒井 範夫 SAKAI, Norio
  • 松本 頼幸 MATSUMOTO, Yoriyuki
  • 土田 裕明 TSUCHIDA, Hiroaki
Agents
  • 梁瀬 右司 YANASE, Yuji
  • 振角 正一 FURIKADO, Shoichi
  • 丸山 陽介 MARUYAMA, Yosuke
Priority Data
2015-15872511.08.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) HIGH-FREQUENCY MODULE AND METHOD FOR PRODUCING SAME
(FR) MODULE HAUTE FRÉQUENCE ET SON PROCÉDÉ DE FABRICATION
(JA) 高周波モジュールおよびその製造方法
Abstract
(EN)
In a high-frequency module provided with a shielding film that shields a part from unnecessary electromagnetic waves from the outside, the adhesion strength of the shielding film is improved. This high-frequency module 1a is provided with: a sealing body 12 having a multilayer wiring board 2, a part 3 mounted on the upper surface 20a of the multilayer wiring board 2, and a sealing resin layer 4 that is stacked on the upper surface 20a of the multilayer wiring board 2 and covers the part 3; and a shielding film 5 that covers the surface of the sealing resin layer 4. A side of the sealing body 12 has a curved surface section 12b formed in a curved surface shape, and the curved surface section 12b is roughened by a plurality of grooves 10a.
(FR)
Dans un module haute fréquence doté d'un film de protection qui protège une partie contre les ondes électromagnétiques indésirables en provenance de l'extérieur, la force d'adhérence du film de protection est améliorée. Ce module haute fréquence 1a est pourvu : d'un corps d'étanchéité 12 ayant une carte de câblage multicouche 2, une partie 3 montée sur la surface supérieure 20a de la carte de câblage multicouche 2, et une couche de résine d'étanchéité 4 qui est empilée sur la surface supérieure 20a de la carte de câblage multicouche 2 et recouvre la partie 3 ; et d'un film de protection 5 qui couvre la surface de la couche de résine d'étanchéité 4. Un côté du corps d'étanchéité 12 possède une section de surface incurvée 12b se présentant sous la forme d'une surface incurvée, et la section de surface incurvée 12b est rendue rugueuse par une pluralité de rainures 10a.
(JA)
部品に対する外部からの不要な電磁波を遮蔽するシールド膜を備える高周波モジュールにおいて、シールド膜の密着強度を向上する。 高周波モジュール1aは、多層配線基板2と、該多層配線基板2の上面20aに実装された部品3と、多層配線基板2の上面20aに積層され部品3を覆う封止樹脂層4とを有する封止体12と、封止樹脂層4の表面を被覆するシールド膜5とを備え、封止体12の側面は、曲面状に形成された曲面部12bを有し、該曲面部12bが複数の溝10aにより粗面化されている。
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