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1. (WO2017022086) SEMICONDUCTOR DEVICE MANUFACTURING METHOD, ETCHING METHOD, SUBSTRATE PROCESSING DEVICE AND RECORDING MEDIUM
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/022086 International Application No.: PCT/JP2015/072124
Publication Date: 09.02.2017 International Filing Date: 04.08.2015
IPC:
H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants: HITACHI KOKUSAI ELECTRIC INC.[JP/JP]; 15-12, Nishi-shimbashi 2-chome, Minato-ku, Tokyo 1058039, JP
Inventors: TAKANO, Satoshi; JP
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD, ETCHING METHOD, SUBSTRATE PROCESSING DEVICE AND RECORDING MEDIUM
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR, PROCÉDÉ DE GRAVURE, DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET SUPPORT D'ENREGISTREMENT
(JA) 半導体装置の製造方法、エッチング方法、及び基板処理装置並びに記録媒体
Abstract:
(EN) Provided is a feature that includes at least the following: a step for accommodating in a processing chamber a substrate having an Si film on at least part of the surface thereof; a step for supplying processing gas to the substrate and eliminating the Si film; and an exhaust step for eliminating a by-product produced by the reaction between the Si film and the processing gas. The step for eliminating the Si film and the exhaust step are set as one cycle, and the cycle is repeatedly carried out.
(FR) L'invention porte sur un élément qui comprend ce qui suit : une étape consistant à recevoir dans une chambre de traitement un substrat comportant un film de Si sur au moins une partie de sa surface ; une étape consistant à introduire un gaz de traitement sur le substrat et à éliminer le film de Si ; et une étape d'échappement consistant à éliminer un sous-produit produit par la réaction entre le film de Si et le gaz de traitement. L'étape consistant à éliminer le film de Si et l'étape d'échappement sont définies constituant un cycle, et le cycle est réalisé de manière répétée.
(JA) 少なくとも表面の一部にSi膜を有する基板を処理室に収容する工程と、前記基板に処理ガスを供給し、前記Si膜を除去する工程と、前記Si膜と前記処理ガスが反応することにより生成される副生成物を除去する排気工程と、を少なくとも有し、前記Si膜を除去する工程と前記排気工程を一サイクルとし、該サイクルを繰り返し実行する技術が提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)