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1. (WO2017021936) METHOD FOR PREPARING MICROSTRUCTURE ARRAYS ON THE SURFACE OF THIN FILM MATERIAL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/021936 International Application No.: PCT/IB2016/054750
Publication Date: 09.02.2017 International Filing Date: 05.08.2016
IPC:
C01B 19/00 (2006.01) ,C01B 21/064 (2006.01) ,C01B 33/40 (2006.01) ,C01G 39/02 (2006.01) ,C01G 39/06 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
19
Selenium; Tellurium; Compounds thereof
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
21
Nitrogen; Compounds thereof
06
Binary compounds of nitrogen with metals, with silicon, or with boron
064
with boron
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
20
Silicates
36
having base-exchange properties but not having molecular sieve properties
38
Layered base-exchange silicates, e.g. clays, micas or alkali metal silicates of kenyaite or magadiite type
40
Clays
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
39
Compounds of molybdenum
02
Oxides; Hydroxides
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
39
Compounds of molybdenum
06
Sulfides
Applicants:
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY [SA/SA]; Attention: John S. Sears 400 Interstate North Parkway Suite 1500 Atlanta, GA 30339, SA
Inventors:
WANG, Peng; SA
TANG, Bo; SA
ZHANG, Lianbin; SA
Priority Data:
62/201,71006.08.2015US
Title (EN) METHOD FOR PREPARING MICROSTRUCTURE ARRAYS ON THE SURFACE OF THIN FILM MATERIAL
(FR) PROCÉDÉ DE PRÉPARATION DE RÉSEAUX À MICROSTRUCTURE À LA SURFACE D’UN MATÉRIAU EN FILM MINCE
Abstract:
(EN) Methods are provided for growing a thin film of a nanoscale material. Thin films of nanoscale materials are also provided. The films can be grown with microscale patterning. The method can include vacuum filtration of a solution containing the nanostructured material through a porous substrate. The porous substrate can have a pore size that is comparable to the size of the nanoscale material. By patterning the pores on the surface of the substrate, a film can be grown having the pattern on a surface of the thin film, including on the top surface opposite the substrate. The nanoscale material can be graphene, graphene oxide, reduced graphene oxide, molybdenum disulfide, hexagonal boron nitride, tungsten diselenide, molybdenum trioxide, or clays such as montmorillonite or lapnotie. The porous substrate can be a porous organic or inorganic membrane, a silicon stencil membrane, or similar membrane having pore sizes on the order of microns.
(FR) L'invention concerne des procédés permettant le développement d'un film mince d'un matériau à l'échelle nanométrique. L’invention concerne également des films minces de matériaux à l'échelle nanométrique. Le développement des films peut se faire au moyen d’une modélisation à l'échelle microscopique. Le procédé peut comprendre la filtration sous vide d'une solution contenant le matériau nanostructuré à travers un substrat poreux. Le substrat poreux peut posséder une taille de pores comparable à la taille du matériau à l'échelle nanométrique. En modélisant les pores à la surface du substrat, un film peut être développé présentant le motif sur une surface du film mince, y compris sur la surface supérieure à l'opposé du substrat. Le matériau à l'échelle nanométrique peut être du graphène, de l'oxyde de graphène, de l'oxyde de graphène réduit, du disulfure de molybdène, du nitrure de bore hexagonal, du diséléniure de tungstène, du trioxyde de molybdène, ou des argiles tels que la montmorillonite ou la laponite. Le substrat poreux peut être une membrane organique ou inorganique poreuse, une membrane de pochoir en silicium, ou une membrane similaire présentant des dimensions de pores de l'ordre de quelques microns.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)