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1. (WO2017020796) THIN-FILM TRANSISTOR STRUCTURE HAVING THREE-DIMENSIONAL FIN-SHAPED CHANNEL AND MANUFACTURING METHOD THEREOF

Pub. No.:    WO/2017/020796    International Application No.:    PCT/CN2016/092450
Publication Date: Fri Feb 10 00:59:59 CET 2017 International Filing Date: Sun Jul 31 01:59:59 CEST 2016
IPC: H01L 29/66
Applicants: SUN YAT-SEN UNIVERSITY
中山大学
SUN YAT-SEN UNIVERSITY CARNEGIE MELLON UNIVERSITY SHUNDE INTERNATIONAL OINT RESEARCH INSTITUTE
广东顺德中山大学卡内基梅隆大学国际联合研究院
Inventors: WANG, Kai
王凯
OU, Hai
欧海
CHEN, Jun
陈军
Title: THIN-FILM TRANSISTOR STRUCTURE HAVING THREE-DIMENSIONAL FIN-SHAPED CHANNEL AND MANUFACTURING METHOD THEREOF
Abstract:
A thin-film transistor structure having a three-dimensional (3D) fin-shaped channel and a manufacturing method thereof. The manufacturing method comprises the following steps: (a) depositing a bottom gate (2) on a substrate (1) and etching the same; (b) depositing a bottom dielectric layer (3) at an upper portion of a structure obtained from Step (a), and consecutively depositing semiconductor thin film layers on the bottom dielectric layer (3); (c) etching the semiconductor thin film layers to obtain a fin-shaped channel (4); (d) respectively depositing an ohmic contact layer (9), a source (5), and a drain (6) on two sides of the semiconductor thin film layers and etching the same; (e) depositing a top dielectric layer (7) and top gate (8) on an upper portion of a structure obtained from Step (d); and (f) etching the top gate (8), thereby completing manufacturing of a thin-film transistor having the two gates and the 3D fin-shaped channel. The resultant transistor has an increased thickness of a channel region semiconductor thin-film, and reduces a thickness of a source or drain region semiconductor thin-film, thereby realizing a preferred light absorption and switching property.