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1. (WO2017020672) PROCESSING METHOD OF ETCHING BLACK PHOSPHORUS TWO-DIMENSIONAL MATERIAL USING OXYGEN PLASMA

Pub. No.:    WO/2017/020672    International Application No.:    PCT/CN2016/088058
Publication Date: Fri Feb 10 00:59:59 CET 2017 International Filing Date: Sat Jul 02 01:59:59 CEST 2016
IPC: H01L 21/465
Applicants: WANG, Beibei
王贝贝
Inventors: WANG, Beibei
王贝贝
Title: PROCESSING METHOD OF ETCHING BLACK PHOSPHORUS TWO-DIMENSIONAL MATERIAL USING OXYGEN PLASMA
Abstract:
Provided is a processing method of etching a black phosphorus two-dimensional material member using an oxygen plasma. The method comprises the following steps: etching a multi-layer black phosphorus two-dimensional material member using an oxygen plasma, wherein the multi-layer black phosphorus two-dimensional material member is etched to be a thin black phosphorus two-dimensional material member having a target number of layers; and forming a phosphorus oxide protection layer on a surface of the thin black phosphorus two-dimensional material member. The present invention can realize accurate control of the layer number of a black phosphorus two-dimensional material member and suppress degradation of the black phosphorus two-dimensional material in the ambient atmosphere, thus significantly increasing the effective existing duration of the black phosphorus two-dimensional material in room temperature and ambient atmosphere, and preventing the black phosphorus two-dimensional material from contamination in further processing. The method further comprises a passivation processing step to further increase the lifespan of the oxidization-etched black phosphorus two-dimensional material via adding a second protection layer.