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1. (WO2017020360) AMOLED PIXEL DRIVING CIRCUIT AND PIXEL DRIVING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/020360 International Application No.: PCT/CN2015/087909
Publication Date: 09.02.2017 International Filing Date: 24.08.2015
IPC:
G09G 3/32 (2016.01)
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
G
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3
Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20
for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
22
using controlled light sources
30
using electroluminescent panels
32
semiconductive, e.g. diodes
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.[CN/CN]; No.9-2, Tangming Road, Guangming District Shenzhen, Guangdong 518132, CN
Inventors: CAI, Yuying; CN
Agent: COMIPS INTELLECTUAL PROPERTY OFFICE; Room 15E, Shenkan Building, Shangbu Zhong Road, Futian District Shenzhen, Guangdong 518028, CN
Priority Data:
201510484324.103.08.2015CN
Title (EN) AMOLED PIXEL DRIVING CIRCUIT AND PIXEL DRIVING METHOD
(FR) CIRCUIT D'ATTAQUE DE PIXEL AMOLED ET PROCÉDÉ D'ATTAQUE DE PIXEL
(ZH) AMOLED像素驱动电路及像素驱动方法
Abstract:
(EN) An AMOLED pixel driving circuit and pixel driving method. The AMOLED pixel driving circuit uses a 3T1C structure, and comprises a first thin film transistor (T1), a second thin film transistor (T2), a third thin film transistor (T3), a memory capacitor (Cs), and an organic light-emitting diode (OLED). A second scan signal voltage (Vsel2) is introduced, and an initial low potential (Vini) of data signal voltage (VData) is provided to the first thin film transistor (T1), i.e. the source electrode of the driving thin film transistor (T1), by means of the third thin film transistor (T3) in the reset stage (S1), so that variations of the threshold voltage (Vth) of the driving thin film transistor (T1) can be effectively compensated, and the complexity of a supply voltage signal can be reduced.
(FR) L’invention concerne un circuit d'attaque de pixel à diode électroluminescente organique à matrice active (AMOLED) et un procédé d'attaque de pixel. Le circuit d'attaque de pixel AMOLED utilise une structure 3T1C, et comprend un premier transistor en couches minces (T1), un deuxième transistor en couches minces (T2), un troisième transistor en couches minces (T3), un condensateur de mémoire (Cs), et une diode électroluminescente organique (OLED). Une seconde tension de signal de balayage (Vsel2) est introduite, et un faible potentiel initial (Vini) de la tension de signal de données (VData) est fourni au premier transistor en couches minces (T1), c'est-à-dire à l'électrode de source du transistor en couches minces d'attaque (T1), par l'intermédiaire du troisième transistor en couches minces (T3) dans l'étage de réinitialisation (S1), de telle sorte que des variations de la tension de seuil (Vth) du transistor en couches minces d'attaque (T1) peuvent être efficacement compensées et la complexité d'un signal de tension d'alimentation peut être réduite.
(ZH) 一种AMOLED像素驱动电路及像素驱动方法。该AMOLED像素驱动电路采用3T1C结构,包括:第一薄膜晶体管(T1)、第二薄膜晶体管(T2)、第三薄膜晶体管(T3)、存储电容(Cs)、及有机发光二极管(OLED),并引入第二扫描信号电压(Vsel2),通过第三薄膜晶体管(T3)在复位阶段(S1)向第一薄膜晶体管(T1)即驱动薄膜晶体管(T1)的源极提供数据信号电压(VData)的初始低电位(Vini),能够有效补偿驱动薄膜晶体管(T1)的阈值电压(Vth)变化,减小电源电压信号的复杂度。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)