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1. (WO2017019070) NON-VOLATILE RESISTANCE MEMORY DEVICES INCLUDING A VOLATILE SELECTOR WITH COPPER AND SILICON DIOXIDE

Pub. No.:    WO/2017/019070    International Application No.:    PCT/US2015/042729
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Thu Jul 30 01:59:59 CEST 2015
IPC: H01L 27/115
Applicants: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventors: ZHANG, Minxian Max
SAMUELS, Katy
LI, Zhiyong
GE, Ning
WILLIAMS, R. Stanley
Title: NON-VOLATILE RESISTANCE MEMORY DEVICES INCLUDING A VOLATILE SELECTOR WITH COPPER AND SILICON DIOXIDE
Abstract:
A nonvolatile memory cell includes a volatile selector electrically coupled in series with a nonvolatile resistance memory device. The nonvolatile resistance memory device may be a switching material sandwiched between a first bottom electrode and a first top electrode. The volatile selector may be a selector oxide matrix sandwiched between a second bottom electrode and a second top electrode. The selector oxide matrix includes silicon dioxide, while one or both of the second bottom electrode and the second top electrode includes copper. A memory array utilizing the memory cell and a method for manufacturing the memory array are also provided.