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1. (WO2017019064) COMPLEMENTARY CURRENT FIELD-EFFECT TRANSISTOR DEVICES AND AMPLIFIERS

Pub. No.:    WO/2017/019064    International Application No.:    PCT/US2015/042696
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Thu Jul 30 01:59:59 CEST 2015
IPC: H03K 19/094
Applicants: CIRCUIT SEED, LLC
Inventors: SCHOBER, Robert, C.
SCHOBER, Susan, Marya
Title: COMPLEMENTARY CURRENT FIELD-EFFECT TRANSISTOR DEVICES AND AMPLIFIERS
Abstract:
The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.