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1. (WO2017019013) DOPED ABSORPTION DEVICES

Pub. No.:    WO/2017/019013    International Application No.:    PCT/US2015/042250
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Tue Jul 28 01:59:59 CEST 2015
IPC: H01L 31/18
H01L 31/09
H01L 31/0288
Applicants: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventors: HUANG, Zhihong
BEAUSOLEIL, Raymond, G.
Title: DOPED ABSORPTION DEVICES
Abstract:
An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.