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1. (WO2017018222) PIEZOELECTRIC FILM, METHOD FOR PRODUCING SAME, BIMORPH ELEMENT, PIEZOELECTRIC ELEMENT, AND METHOD FOR PRODUCING SAME

Pub. No.:    WO/2017/018222    International Application No.:    PCT/JP2016/070757
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Fri Jul 08 01:59:59 CEST 2016
IPC: H01L 41/187
C01G 25/00
C01G 33/00
C23C 14/08
H01L 41/047
H01L 41/083
H01L 41/293
H01L 41/297
H01L 41/312
H01L 41/316
H01L 41/318
H01L 41/43
Applicants: YOUTEC CO., LTD.
株式会社ユーテック
Inventors: KIJIMA Takeshi
木島 健
HONDA Yuuji
本多 祐二
Title: PIEZOELECTRIC FILM, METHOD FOR PRODUCING SAME, BIMORPH ELEMENT, PIEZOELECTRIC ELEMENT, AND METHOD FOR PRODUCING SAME
Abstract:
The present invention addresses the problem of providing a film-like piezoelectric film having a film thickness of 5 µm or more. One embodiment of the present invention is a piezoelectric film that is a (PbaLab)(ZrcTidNbe)O3-δ film having a film thickness of 5 µm or more and in which a, b, c, d, e, and δ satisfy formulas 1 and 11-16 indicated below. The (PbaLab)(ZrcTidNbe)O3-δ film has a dielectric constant of 100-600 per µm of film thickness, and said piezoelectric film has least one of a coercive voltage of 3-15 V per µm of film thickness and a remanence value of 20-50 µC/cm2. Formula 1: 0 ≤ δ ≤ 1. Formula 11: 1.00 ≤ a + b ≤ 1.35. Formula 12: 0 ≤ b ≤ 0.8. Formula 13: 1.00 ≤ c + d + e ≤ 1.1. Formula 14: 0.4 ≤ c ≤ 0.7. Formula 15: 0.3 ≤ d ≤ 0.6. Formula 16: 0 ≤ e ≤ 0.1.