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1. WO2017018203 - DISPLAY DEVICE AND IMAGE PICKUP DEVICE

Publication Number WO/2017/018203
Publication Date 02.02.2017
International Application No. PCT/JP2016/070574
International Filing Date 12.07.2016
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
G09F 9/30 2006.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H01L 27/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
G09F 9/30
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H01L 27/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • ソニー株式会社 SONY CORPORATION [JP]/[JP]
Inventors
  • 勝原 真央 KATSUHARA, Mao
  • 佐々木 僚 SASAKI, Ryo
Agents
  • 特許業務法人つばさ国際特許事務所 TSUBASA PATENT PROFESSIONAL CORPORATION
Priority Data
2015-14704424.07.2015JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DISPLAY DEVICE AND IMAGE PICKUP DEVICE
(FR) DISPOSITIF D'AFFICHAGE ET DISPOSITIF DE CAPTURE D’IMAGE
(JA) 表示装置および撮像装置
Abstract
(EN)
Provided is a display device comprising a plurality of pixels and thin film transistors one of which is provided to each pixel. The thin film transistors each include the following: a first electrode; a semiconductor layer which includes an organic semiconductor and which is disposed opposing the first electrode with an insulative film interposed therebetween; and a second electrode which is electrically connected to the semiconductor layer; and a light absorbing layer which is disposed so as to be spaced apart from the semiconductor layer and which is formed from an organic semiconductor.
(FR)
L'invention concerne un dispositif d'affichage comprenant une pluralité de pixels et des transistors à couches minces, un transistor étant prévu pour chaque pixel. Les transistors à couches minces comprennent chacun les éléments suivants : une première électrode ; une couche semi-conductrice qui comprend un semi-conducteur organique et qui est disposée à l'opposé de la première électrode, un film isolant étant intercalé entre celles-ci ; et une seconde électrode qui est connectée électriquement à la couche semi-conductrice ; et une couche absorbant la lumière qui est disposée de manière à être espacée de la couche semi-conductrice et qui est constituée d'un semi-conducteur organique.
(JA)
この表示装置は、複数の画素と、画素毎に設けられた薄膜トランジスタとを備え、薄膜トランジスタは、第1電極と、第1電極に絶縁膜を介して対向配置されると共に有機半導体を含む半導体層と、半導体層に電気的に接続された第2電極と、半導体層と離隔して配置されると共に、有機半導体から構成された光吸収層とを有する。
Also published as
Latest bibliographic data on file with the International Bureau