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|1. (WO2017018078) SPUTTERING DEVICE AND INSULATING FILM PRODUCTION METHOD|
|Applicants:||YOUTEC CO., LTD.
|Title:||SPUTTERING DEVICE AND INSULATING FILM PRODUCTION METHOD|
The present invention addresses the problem of improving the film formation rate of a sputtering device provided with a sputtering target including an insulator. One aspect of the present invention is a sputtering device provided with: a holding part 13 for holding a substrate 12; a sputtering target 14 including an insulator having a specific resistance of 1×107 Ω∙cm or more; an output supply mechanism 16 for supplying high-frequency output of 10 kHz to 30 MHz, inclusive, to the sputtering target in a pulse form having a DUTY ratio of 25-90%, inclusive, in a cycle of 1/20-1/3 ms, inclusive; a first gas introduction source 17 for introducing a noble gas into a chamber 11; and a vacuum exhaust mechanism 19 for evacuating the chamber, wherein the DUTY ratio is the ratio of the period in which the high-frequency output is applied to the sputtering target in one cycle.