Search International and National Patent Collections

1. (WO2017017940) DIAMOND ELECTRONIC ELEMENT AND METHOD FOR PRODUCING DIAMOND ELECTRONIC ELEMENT

Pub. No.:    WO/2017/017940    International Application No.:    PCT/JP2016/003424
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Sat Jul 23 01:59:59 CEST 2016
IPC: H01L 21/20
C23C 16/27
C30B 29/04
H01L 21/205
H01L 21/329
H01L 29/16
H01L 29/47
H01L 29/872
Applicants: SHIN-ETSU CHEMICAL CO.,LTD.
信越化学工業株式会社
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
国立研究開発法人産業技術総合研究所
Inventors: NOGUCHI, Hitoshi
野口 仁
SHIRAI, Shozo
白井 省三
YAMASAKI, Satoshi
山崎 聡
TAKEUCHI, Daisuke
竹内 大輔
OGURA, Masahiko
小倉 政彦
MAKINO, Toshiharu
牧野 俊晴
KATO, Hiromitsu
加藤 宙光
MATSUMOTO, Tsubasa
松本 翼
KAWASHIMA, Hiroyuki
川島 宏幸
Title: DIAMOND ELECTRONIC ELEMENT AND METHOD FOR PRODUCING DIAMOND ELECTRONIC ELEMENT
Abstract:
The present invention is a diamond electronic element which is characterized by comprising: a silicon base; an intermediate layer that is formed on the silicon base and is composed of a single crystal MgO layer, a single crystal SrTiO3 layer, an α-Al2O3 layer or a YSZ (yttria-stabilized zirconia) layer; a foundation layer that is formed on the intermediate layer and is composed of an iridium layer, a rhodium layer or a platinum layer; and a single crystal diamond layer that is formed on the foundation layer. This diamond electronic element is also characterized in that the single crystal diamond layer has a thickness of 300 μm or less. Consequently, the present invention provides: a low-cost diamond electronic element having a large area and high quality; and a method for producing a diamond electronic element.