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1. (WO2017017917) SILICON SINGLE CRYSTAL GROWING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/017917 International Application No.: PCT/JP2016/003275
Publication Date: 02.02.2017 International Filing Date: 11.07.2016
IPC:
C30B 29/06 (2006.01) ,C30B 15/00 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
Applicants:
信越半導体株式会社 SHIN-ETSU HANDOTAI CO.,LTD. [JP/JP]; 東京都千代田区大手町二丁目2番1号 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
星 亮二 HOSHI, Ryoji; JP
小内 駿英 ONAI, Takahide; JP
玉塚 正郎 TAMATSUKA, Masaro; JP
Agent:
好宮 幹夫 YOSHIMIYA, Mikio; JP
Priority Data:
2015-14990029.07.2015JP
Title (EN) SILICON SINGLE CRYSTAL GROWING METHOD
(FR) PROCÉDÉ DE CROISSANCE DE MONOCRISTAL DE SILICIUM
(JA) シリコン単結晶の育成方法
Abstract:
(EN) The present invention is a silicon single crystal growing method in which, by using the Czochralski method, a single crystal is pulled up from a silicon melt that is accommodated in a crucible and grown, wherein while pulling up a silicon single crystal, a first gas is introduced into a pulling chamber in which the silicon single crystal is pulled up and accommodated, and the atmosphere on the pulling chamber side is set to be of the first gas. Moreover, while pulling up the silicon single crystal, a second gas different from the first gas is introduced into a main chamber that is provided continuous with the pulling chamber and in which at least the crucible is stored, the atmosphere on the main chamber side is set to be of the second gas, and the silicon single crystal is pulled up. Thus provided is a silicon single crystal growing method by the Czochralski method, said growing method making it possible to control defects in silicon single crystals that are grown without causing the deterioration of parts in a hot zone.
(FR) L’invention concerne un procédé de croissance de monocristal de silicium selon lequel, par un procédé Czochralski, un monocristal est mis en croissance par étirement à partir d’un bain fondu de silicium logé dans un creuset. Selon ce procédé, pendant l’étirement d’un monocristal de silicium, un premier gaz est introduit dans une chambre d’étirement dans laquelle le monocristal de silicium est logé et étiré, l’atmosphère côté chambre d’étirement est ainsi constituée de ce premier gaz, pendant l’étirement de ce monocristal de silicium, un second gaz différent du premier gaz, est introduit dans une chambre principale agencée à la suite de la chambre d’étirement, et admettant au moins le creuset, l’atmosphère côté chambre principale est ainsi constituée de ce second gaz, et le monocristal de silicium est étiré. Ainsi, l’invention fournit un procédé de croissance de monocristal de silicium par un procédé Czochralski qui permet de réguler les défauts dans un monocristal de silicium mis en croissance, sans provoquer la dégradation de composants d’une région HZ.
(JA) 本発明は、チョクラルスキー法により、単結晶をルツボに収容されたシリコン融液から引上げて育成するシリコン単結晶の育成方法であって、シリコン単結晶の引上げ中に、シリコン単結晶が引上げられて収容される引上げチャンバに、第1ガスを導入して、引上げチャンバ側の雰囲気を第1ガスとし、かつ、シリコン単結晶の引上げ中に、引上げチャンバに連設され、少なくともルツボを格納したメインチャンバに、第1ガスとは異なる第2ガスを導入して、メインチャンバ側の雰囲気を第2ガスとして、シリコン単結晶を引上げるシリコン単結晶の育成方法である。これにより、CZ法によるシリコン単結晶の育成方法において、HZ領域の部品を劣化させることなく、育成するシリコン単結晶中の欠陥を制御することができるシリコン単結晶の育成方法が提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)