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1. (WO2017017891) GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2017/017891    International Application No.:    PCT/JP2016/003021
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Thu Jun 23 01:59:59 CEST 2016
IPC: H01L 33/14
H01L 33/06
H01L 33/32
Applicants: DOWA ELECTRONICS MATERIALS CO., LTD.
DOWAエレクトロニクス株式会社
Inventors: WATANABE, Yasuhiro
渡邉 康弘
FUJITA, Takehiko
藤田 武彦
Title: GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR
Abstract:
Provided are a group III nitride semiconductor light-emitting element having an element lifespan superior to conventional elements, and a manufacturing method therefor. This group III nitride semiconductor light-emitting element 100 is characterized by having, in the order given, the following: an n-type group III nitride semiconductor layer 30; a group III nitride semiconductor laminated body 40 formed by alternatingly laminating, in the order given, N layers each (provided that N is an integer) of a barrier layer 40a and a well layer 40b having a bandgap which is smaller than the barrier layer 40a; an AlN guide layer 60; and a p-type group III nitride semiconductor layer 70. The group III nitride semiconductor light-emitting element is also characterized in that the thickness of the AlN guide layer 60 is 0.5-2.0nm.