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1. (WO2017017772) PHOTOVOLTAIC POWER GENERATION ELEMENT AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2017/017772    International Application No.:    PCT/JP2015/071295
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Tue Jul 28 01:59:59 CEST 2015
IPC: H01L 31/0224
Applicants: CHOSHU INDUSTRY CO., LTD.
長州産業株式会社
Inventors: KOBAYASHI Eiji
小林 英治
Title: PHOTOVOLTAIC POWER GENERATION ELEMENT AND METHOD FOR MANUFACTURING SAME
Abstract:
Provided are: a photovoltaic power generation element wherein a collector electrode on the rear surface side can be formed in a thin film, while maintaining output characteristics; and a method for manufacturing the photovoltaic power generation element. A photovoltaic power generation element of the present invention is provided with: a p-type or n-type crystalline semiconductor substrate; a first intrinsic amorphous semiconductor layer, a p-type amorphous semiconductor layer, a first transparent conductive film, and a first collector electrode, which are laminated in this order on one surface side of the crystalline semiconductor substrate; and a first intrinsic amorphous semiconductor layer, an n-type amorphous semiconductor layer, a second transparent conductive film, and a second collector electrode, which are laminated in this order on the other surface side of the crystalline semiconductor substrate. The photovoltaic power generation element is characterized in that the first collector electrode or the second collector electrode is a metal film containing silver, copper, and palladium and/or gallium. The average thickness of the metal film is preferably 15-60 nm. It is preferable that the photovoltaic power generation element is annealed.