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1. (WO2017016009) CONTROL CIRCUIT OF THIN FILM TRANSISTOR

Pub. No.:    WO/2017/016009    International Application No.:    PCT/CN2015/087758
Publication Date: Fri Feb 03 00:59:59 CET 2017 International Filing Date: Sat Aug 22 01:59:59 CEST 2015
IPC: H01L 29/786
G02F 1/1368
G09G 3/36
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
武汉华星光电技术有限公司
Inventors: ZHAO, Mang
赵莽
CHEN, Gui
陈归
TIAN, Yong
田勇
Title: CONTROL CIRCUIT OF THIN FILM TRANSISTOR
Abstract:
A control circuit of a thin film transistor comprises a substrate (201); a silicon nitride layer (202), provided on the substrate (201); a silicon dioxide layer (204), provided on the silicon nitride layer (202); a shading layer, located in the silicon nitride layer (202), and the shading layer comprising a first shading area (2031) and a second shading area (2032); at least one N-shaped metal oxidation semiconductor (42), disposed on the silicon dioxide layer (204) corresponding to the position of the first shading area (2031); and at least one P-shaped metal oxidation semiconductor (62), disposed on the silicon dioxide layer (204) corresponding to the position of the second shading area (2032). The N-shaped metal oxidation semiconductor (42) and the P-shaped metal oxidation semiconductor (62) respectively have a gate electrode layer (208), and electric potentials of a first control signal received by the potential pulse of the gate electrode layers (208) and a second control signal received by the shading layer synchronously change.