Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017013881) RUTILE-TYPE NIOBIUM OXYNITRIDE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/013881 International Application No.: PCT/JP2016/003412
Publication Date: 26.01.2017 International Filing Date: 21.07.2016
IPC:
C01G 33/00 (2006.01) ,C23C 14/06 (2006.01) ,C23C 14/28 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
33
Compounds of niobium
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
24
Vacuum evaporation
28
by wave energy or particle radiation
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP
Inventors:
菊地 諒介 KIKUCHI, Ryosuke; --
羽藤 一仁 HATO, Kazuhito; --
長谷川 哲也 HASEGAWA, Tetsuya; --
廣瀬 靖 HIROSE, Yasushi; --
Agent:
鎌田 耕一 KAMADA, Koichi; JP
間中 恵子 KENCHU, Keiko; JP
Priority Data:
2015-14570323.07.2015JP
Title (EN) RUTILE-TYPE NIOBIUM OXYNITRIDE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR STRUCTURE
(FR) OXYNITRURE DE NIOBIUM TYPE RUTILE AINSI QUE PROCÉDÉ DE FABRICATION DE CELUI-CI, ET STRUCTURE DE SEMI-CONDUCTEUR
(JA) ルチル型ニオブ酸窒化物及びその製造方法、並びに半導体構造体
Abstract:
(EN) The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) comprising: a substrate (110) in which at least one principal surface is formed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film (120)) grown on said one principal surface of the substrate (110), the niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON.
(FR) L’invention fournit un oxynitrure de niobium type rutile qui possède une structure cristalline de type rutile, et qui est représenté par la formule chimique NbON. En outre, l’invention fournit une structure de semi-conducteur (100) qui contient : un substrat (110) tel qu’au moins une face principale est formée par un composé type rutile possédant une structure cristalline de type rutile ; et un oxynitrure de niobium (par exemple, un film d’oxynitrure de niobium type rutile (120)) qui possède une structure cristalline de type rutile, qui est représenté par la formule chimique NbON, et dont la croissance s’est faite sur ladite face principale du substrat (110).
(JA) 本開示は、ルチル型の結晶構造を有する、化学式NbONにより表されるルチル型ニオブ酸窒化物を提供する。また、本開示は、少なくとも一方の主面が、ルチル型の結晶構造を有するルチル型化合物で形成されている基板(110)と、基板(110)の前記一方の主面上に成長した、ルチル型の結晶構造を有する化学式NbONにより表されるニオブ酸窒化物(例えばルチル型ニオブ酸窒化物膜(120))と、を含む半導体構造体(100)も提供する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)