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1. (WO2017003646) THERMAL SHIELD FOR ELECTROSTATIC CHUCK
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/003646 International Application No.: PCT/US2016/036000
Publication Date: 05.01.2017 International Filing Date: 06.06.2016
IPC:
H01L 21/683 (2006.01) ,H01L 21/67 (2006.01) ,H01L 21/324 (2006.01) ,H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930, US
Inventors:
STONE, Dale K.; US
CHIPMAN, David J.; US
Agent:
FRAME, Robert C.; US
Priority Data:
62/186,06829.06.2015US
Title (EN) THERMAL SHIELD FOR ELECTROSTATIC CHUCK
(FR) BOUCLIER THERMIQUE POUR PORTE-SUBSTRAT ÉLECTROSTATIQUE
Abstract:
(EN) A thermal shield is disclosed that may be disposed between a heated electrostatic chuck and a base. The thermal shield comprises a thermal insulator, such as a polyimide film, having a thickness of between 1 and 5 mils. The polyimide film is coated on one side with a layer of reflective material, such as aluminum. The layer of reflective material may be between 30 and 100 nanometers. The thermal shield is disposed such that the layer of reflective material is closer to the chuck. Because of the thinness of the layer of reflective material, the thermal shield does not retain a significant amount of heat. Further, the temperature of the thermal shield remains far below the glass transition temperature of the polyimide film.
(FR) L'invention concerne un bouclier thermique qui peut être disposé entre un porte-substrat électrostatique chauffé et une base. Le bouclier thermique comprend un isolant thermique, tel qu'un film de polyimide, ayant une épaisseur comprise entre 1 et 5 millièmes de pouce. Le film de polyimide est revêtu sur un côté avec une couche de matériau réfléchissant, tel que l'aluminium. La couche de matériau réfléchissant peut être entre 30 et 100 nanomètres. Le bouclier thermique est disposé de telle sorte que la couche de matériau réfléchissant est plus proche du porte-substrat. En raison de la minceur de la couche de matériau réfléchissant, le bouclier thermique ne retient pas une quantité significative de chaleur. En outre, la température du bouclier thermique reste très en dessous de la température de transition vitreuse du film de polyimide.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020180014437CN107810548JP2018525812