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1. (WO2016194613) PATTERN FORMATION METHOD, RESIST PATTERN, PROCESS FOR PRODUCING ELECTRONIC DEVICE, AND COMPOSITION FOR UPPER-LAYER FILM FORMATION
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/194613 International Application No.: PCT/JP2016/064742
Publication Date: 08.12.2016 International Filing Date: 18.05.2016
IPC:
G03F 7/11 (2006.01) ,G03F 7/32 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
30
Imagewise removal using liquid means
32
Liquid compositions therefor, e.g. developers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
井上 尚紀 INOUE Naoki; JP
丹呉 直紘 TANGO Naohiro; JP
山本 慶 YAMAMOTO Kei; JP
白川 三千紘 SHIRAKAWA Michihiro; JP
後藤 研由 GOTO Akiyoshi; JP
Agent:
高松 猛 TAKAMATSU Takeshi; JP
Priority Data:
2015-11036229.05.2015JP
Title (EN) PATTERN FORMATION METHOD, RESIST PATTERN, PROCESS FOR PRODUCING ELECTRONIC DEVICE, AND COMPOSITION FOR UPPER-LAYER FILM FORMATION
(FR) PROCÉDÉ DE FORMATION DE MOTIF, MOTIF DE RÉSERVE, PROCESSUS DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE, ET COMPOSITION POUR LA FORMATION D'UN FILM DE COUCHE SUPÉRIEURE
(JA) パターン形成方法、レジストパターン、電子デバイスの製造方法、及び上層膜形成用組成物
Abstract:
(EN) A pattern formation method comprising a step in which a composition for upper-layer film formation that comprises a resin having a ClogP(Poly) of 3.0 or greater and at least one compound selected from the group consisting of (A1) to (A4) described in the description is applied to a resist film to form an upper-layer film, a step in which the resist film is exposed to light, and a step in which the exposed resist film is developed with a developing liquid comprising an organic solvent; a resist pattern formed by the pattern formation method; a process for producing electronic devices which includes the pattern formation method; and the composition for upper-layer film formation.
(FR) La présente invention a trait : à un procédé de formation de motif qui comprend une étape au cours de laquelle une composition pour la formation d'un film de couche supérieure qui contient une résine ayant une valeur ClogP(Poly) de 3,0 ou plus et au moins un composé choisi dans le groupe constitué par (A1) à (A4) définis dans la description est appliquée sur un film de réserve afin de former un film de couche supérieure, une étape au cours de laquelle le film de réserve est exposé à la lumière, et une étape au cours de laquelle le film de réserve exposé est développé à l'aide d'un liquide de développement contenant un solvant organique; à un motif de réserve formé grâce au procédé de formation de motif; à un processus de fabrication de dispositifs électroniques qui inclut le procédé de formation de motif; et à la composition pour la formation du film de couche supérieure.
(JA) レジスト膜上に、ClogP(Poly)が3.0以上である樹脂と明細書に記載の(A1)~(A4)からなる群より選択される少なくとも1種の化合物とを含有する上層膜形成用組成物を塗布して上層膜を形成する工程、レジスト膜を露光する工程、及び露光されたレジスト膜を有機溶剤を含む現像液で現像する工程を含むパターン形成方法、上記パターン形成方法により形成されたレジストパターン、上記パターン形成方法を含む電子デバイスの製造方法、及び、上記上層膜形成用組成物。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)