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1. WO2016194208 - ULTRASONIC TRANSDUCER ELEMENT, METHOD FOR MANUFACTURING SAME, AND ULTRASONIC IMAGE PICKUP DEVICE

Publication Number WO/2016/194208
Publication Date 08.12.2016
International Application No. PCT/JP2015/066236
International Filing Date 04.06.2015
IPC
H04R 19/00 2006.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19Electrostatic transducers
H03H 9/24 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
24Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive
H04R 31/00 2006.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
CPC
A61B 8/4483
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
8Diagnosis using ultrasonic, sonic or infrasonic waves
44Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
4483characterised by features of the ultrasound transducer
B06B 1/0292
BPERFORMING OPERATIONS; TRANSPORTING
06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, ; e.g.; FOR PERFORMING MECHANICAL WORK IN GENERAL
1Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
02making use of electrical energy
0292Electrostatic transducers, e.g. electret-type
B81B 2201/0271
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
02Sensors
0271Resonators; ultrasonic resonators
B81B 2203/0315
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
03Static structures
0315Cavities
B81B 2207/053
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2207Microstructural systems or auxiliary parts thereof
05Arrays
053of movable structures
B81B 3/0037
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
0035Constitution or structural means for controlling the movement of the flexible or deformable elements
0037For increasing stroke, i.e. achieve large displacement of actuated parts
Applicants
  • 株式会社日立製作所 HITACHI, LTD. [JP]/[JP]
Inventors
  • 長谷川 浩章 HASEGAWA Hiroaki
  • 竹崎 泰一 TAKEZAKI Taiichi
  • 町田 俊太郎 MACHIDA Shuntaro
  • 龍崎 大介 RYUZAKI Daisuke
Agents
  • 青稜特許業務法人 SEIRYO I.P.C.
Priority Data
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ULTRASONIC TRANSDUCER ELEMENT, METHOD FOR MANUFACTURING SAME, AND ULTRASONIC IMAGE PICKUP DEVICE
(FR) ÉLÉMENT DE TRANSDUCTEUR ULTRASONIQUE, SON PROCÉDÉ DE PRODUCTION ET DISPOSITIF DE CAPTURE D'IMAGE ULTRASONIQUE
(JA) 超音波トランスデューサ素子、その製造方法及び超音波撮像装置
Abstract
(EN) This ultrasonic transducer element is configured by being provided with: a substrate; a lower electrode formed on a first main surface of the substrate; a first insulating film formed on the lower electrode; a first cavity layer formed on the first insulating film; a second insulating film formed on the first cavity layer; an upper electrode, which is formed on the second insulating film, and is disposed at a position overlapping the first cavity layer when viewed from the upper surface; a third insulating film formed on the upper electrode; a second cavity layer formed on the third insulating film; a fourth insulating film formed on the second cavity layer; a fixed section configured from the second to fourth insulating films surrounding the outer periphery of the first cavity layer when viewed from the upper surface of the first main surface of the substrate; a movable section, which is a membrane region further toward the inside than the second cavity layer, said membrane being configured from the upper electrode and the second to fourth insulating films formed on the first cavity layer; and a first connecting section, and a second connecting section laminated by being separated from the first connecting section, as connecting sections that connect the movable section and the fixed section to each other, said connecting sections being configured from the second to fourth insulating films.
(FR) L'invention concerne un élément de transducteur ultrasonique, comportant : un substrat ; une électrode inférieure formée sur une première surface principale du substrat ; un premier film isolant formé sur l'électrode inférieure ; une première couche de cavité formée sur le premier film isolant ; un deuxième film isolant formé sur la première couche de cavité ; une électrode supérieure, qui est formée sur le deuxième film isolant et est disposée au niveau d'une position chevauchant la première couche de cavité lorsque l'on regarde depuis la surface supérieure ; un troisième film isolant formé sur l'électrode supérieure ; une seconde couche de cavité formée sur le troisième film isolant ; un quatrième film isolant formé sur la seconde couche de cavité ; une section fixe conçue à partir des deuxième à quatrième films isolants entourant la périphérie externe de la première couche de cavité lorsque l'on regarde depuis la surface supérieure de la première surface principale du substrat ; une section mobile, qui est une région de membrane davantage vers l'intérieur que la seconde couche de cavité, ladite membrane étant conçue à partir de l'électrode supérieure et des deuxième à quatrième films isolants formés sur la première couche de cavité ; et une première section de connexion, ainsi qu'une seconde section de connexion stratifiée en étant séparée de la première section de connexion, en guise de sections de connexion qui connectent la section mobile et la section fixe l'une à l'autre, lesdites sections de connexion étant conçues à partir des deuxième à quatrième films isolants.
(JA) 超音波トランスデューサ素子を、基板と、前記基板の第1主面上に形成された下部電極と、前記下部電極上に形成された第1絶縁膜と、前記第1絶縁膜上に形成された第1空洞層と、前記第1空洞層上に形成された第2絶縁膜と、前記第2絶縁膜上に形成され、上面からみて前記第1空洞層と重なる位置に配置された上部電極と、前記上部電極上に形成された第3絶縁膜と、前記第3絶縁膜上に形成された第2空洞層と、前記第2空洞層上に形成された第4絶縁膜と、前記基板の第1主面の上面からみて、前記第1空洞層外周を取り囲む前記第2~4絶縁膜より成る固定部と、前記第1空洞層上に形成された前記第2~4絶縁膜と前記上部電極より成るメンブレンにおいて、前記第2空洞層より内側の領域になる可動部と、前記可動部と前記固定部を接続する前記第2~4絶縁膜より成る接続部として、第1接続部と、該第1接続部と間隔を隔てて積層された第2接続部とを備えて構成した。
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